S29GL256P10FFI022 Spansion, S29GL256P10FFI022 Datasheet - Page 31

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S29GL256P10FFI022

Manufacturer Part Number
S29GL256P10FFI022
Description
Flash 256M, 3V, 110ns Parallel NOR Flash
Manufacturer
Spansion
Datasheet

Specifications of S29GL256P10FFI022

Rohs
yes
Data Bus Width
16 bit
Memory Type
NOR Flash
Memory Size
256 Mbit
Architecture
Uniform
Timing Type
Asynchronous
Interface Type
CFI
Access Time
100 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
110 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
FBGA-64
Organization
128 KB x 1024
Notes
1. See
2. See DQ3: Sector Erase Timeout State Indicator
October 22, 2012 S29GL-P_00_A14
No
Table 12.1 on page 69
PASS. Device returns
to reading array.
DQ3 = 1?
Yes
Poll DQ3.
Yes
No
for erase command sequence.
Write Sector Erase Cycles:
Sector Address, Data 30h
Address 555h, Data AAh
Address 2AAh, Data 55h
Address 555h, Data AAh
Address 555h, Data 80h
Address 2AAh, Data 55h
Perform Write Operation
Write Unlock Cycles:
Sector Addresses
(see
Write Additional
Status Algorithm
Additional
DQ5 = 1?
Sectors?
Figure
Yes
Done?
Select
Yes
No
Yes
7.4)
on page 39
D a t a
FAIL. Write reset command
Last Sector
Selected?
to return to reading array.
S29GL-P MirrorBit
No
for information on the sector erase timeout.
No
S h e e t
Figure 7.3 Sector Erase Operation
®
Flash Family
• Each additional cycle must be written within t
• The host system may monitor DQ3 or wait t
• No limit on number of sectors
• Commands other than Erase Suspend or selecting additional
Unlock Cycle 1
Unlock Cycle 2
Command Cycle 1
Command Cycle 2
Command Cycle 3
Specify first sector for erasure
Status may be obtained by reading DQ7, DQ6 and/or DQ2.
Error condition (Exceeded Timing Limits)
acceptance of erase commands
sectors for erasure during timeout reset device to reading array
data
SEA
SEA
to ensure
timeout
31

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