S29GL256P10FFI022 Spansion, S29GL256P10FFI022 Datasheet - Page 79

• Manufacturer Part Number: S29GL256P10FFI022
• Description: Flash 256M, 3V, 110ns Parallel NOR Flash
• Manufacturer: Spansion

Specifications of S29GL256P10FFI022

• Rohs: yes
• Data Bus Width: 16 bit
• Memory Type: NOR Flash
• Memory Size: 256 Mbit
• Architecture: Uniform
• Timing Type: Asynchronous
• Interface Type: CFI
• Access Time: 100 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 110 mA
• Operating Temperature: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Package / Case: FBGA-64
• Organization: 128 KB x 1024

October 22, 2012 S29GL-P_00_A14
Revision A8 (November 28, 2007)
Ordering Information
Operating Ranges
Revision A9 (February 15, 2008)
Electrical Specification
Erase and Programming Performance
Sector Protection Command Definition,
x16 Table
Advance Information on S29GL-R 65
nm MirrorBit Hardware Reset (RESET#)
and Power-up Sequence
Revision A10 (March 19, 2008)
Global
DC Characteristics
Sector Protection Command Definitions
(x16 & x8 tables)
Revision A11 (June 11, 2008)
Ordering Information
Figure: Write Operation Status
Flowchart
Revision A12 (November 20, 2009)
Table Input/Output Descriptions
Figure 64-ball Fortified Ball Grid Array
Figure 56-pin Standard TSOP (Top
View)
Table Autoselect Exit
Table Chip Erase
Erase Suspend/Erase Resume
Tables
Unlock Bypass
Writing Commands/Command
Sequence
WP#/ACC Method
Secured Silicon Sector Entry/Exit
Command Sequence
Table Secured Silicon Sector Exit
Figure Test Setup
Table Test Specification
Table S29GL-P Erase and Program
Operations
Table S29GL-P Alternate CE#
Controlled Erase and Program
Operations
Program Suspend
Program Resume
Unlock Bypass Entry
Unlock Bypass Program
Unlock Bypass Reset
Section
New commercial operating temperature option
New operating temperature range
Modified Test Conditions
Chip Program Time: removed comment
Corrected Lock Register “Read” address
Power-Up Sequence Timings Table: modified Note 2 - reduced timing from 500 µs to 300 µs
Changed document status to Full Production.
Changed Max values for Input Load Current (I
Changed Lock Register Read command from “DATA” to “RD”
Revised Commercial temperature range
Updated flowchart
Removed RFU description
Changed all RFU pins to NC pins
Changed all RFU pins to NC pins
Changed cycle description to Auto Select Exit Command
Changed address of last C source code command from 0x000h to 0x555h
Changed first paragraph, second sentence to sector address is “don't care” for Erase Suspend
Changed sixth paragraph, second sentence to sector address is “don't care” for Erase Suspend
Added Byte Address to tables
Third paragraph, first sentence added unlock bypass Sector Erase and unlock bypass Chip Erase
as valid commands
Changed paragraph, third sentence to sector address of exit command is “don't care”.
Changed tables listed in fourth sentence to Table 6.1-6.4
Changed table listed in Note section to 11.2.
Added source code for program under Table 10.3
Changed Byte and Word addresses of Exit Cycle to “XXXh”
Changed test setup to show only a load of CL
Removed Output Load Test Condition
Removed t
Changed description of t
Change Note 2 to “DC Characteristics”
D a t a
GHWL
S29GL-P MirrorBit
S h e e t
GHEL
to (OE# High to CE# Low)
®
Flash Family
Description
LI
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79