S29GL256P10FFI022 Spansion, S29GL256P10FFI022 Datasheet - Page 66

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S29GL256P10FFI022

Manufacturer Part Number
S29GL256P10FFI022
Description
Flash 256M, 3V, 110ns Parallel NOR Flash
Manufacturer
Spansion
Datasheet

Specifications of S29GL256P10FFI022

Rohs
yes
Data Bus Width
16 bit
Memory Type
NOR Flash
Memory Size
256 Mbit
Architecture
Uniform
Timing Type
Asynchronous
Interface Type
CFI
Access Time
100 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
110 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
FBGA-64
Organization
128 KB x 1024
Notes
1.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
4. Waveforms are for the word mode.
66
Figure 11.15
Addresses
RESET#
RY/BY#
indicates last two bus cycles of a program or erase operation.
WE#
Data
OE#
CE#
t
RH
555 for program
2AA for erase
Figure 11.15 Alternate CE# Controlled Write (Erase/Program) Operation Timings
t
t
t
WS
WH
WC
A0 for program
55 for erase
t
GHEL
t
t
t
DS
CP
PA for program
SA for sector erase
555 for chip erase
CPH
t
AS
t
S29GL-P MirrorBit
DH
OUT
is the data written to the device.
t
AH
PD for program
30 for sector erase
10 for chip erase
t
BUSY
D a t a
®
t
Flash Family
WHWH1 or 2
Data# Polling
S h e e t
DQ7#
PA
S29GL-P_00_A14 October 22, 2012
D
OUT

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