S29GL256P10FFI022 Spansion, S29GL256P10FFI022 Datasheet - Page 33

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S29GL256P10FFI022

Manufacturer Part Number
S29GL256P10FFI022
Description
Flash 256M, 3V, 110ns Parallel NOR Flash
Manufacturer
Spansion
Datasheet

Specifications of S29GL256P10FFI022

Rohs
yes
Data Bus Width
16 bit
Memory Type
NOR Flash
Memory Size
256 Mbit
Architecture
Uniform
Timing Type
Asynchronous
Interface Type
CFI
Access Time
100 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
110 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
FBGA-64
Organization
128 KB x 1024
October 22, 2012 S29GL-P_00_A14
7.7.5
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for erasure. The sector addresses are “don't-cares” when
writing this command. This command is valid only during the sector erase operation, including the t
time-out period during the sector erase command sequence. The Erase Suspend command is ignored if
written during the chip erase operation.
When the Erase Suspend command is written during the sector erase operation, the device requires a
maximum of 20 µs (5 µs typical) to suspend the erase operation. However, when the Erase Suspend
command is written during the sector erase time-out, the device immediately terminates the time-out period
and suspends the erase operation.
After the erase operation has been suspended, the device enters the erase-suspend-read mode. The system
can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all
sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status
information on DQ7-DQ0. The system can use DQ7, or DQ6, and DQ2 together, to determine if a sector is
actively erasing or is erase-suspended. Refer to
After an erase-suspended program operation is complete, the device returns to the erase-suspend-read
mode. The system can determine the status of the program operation using write operation status bits, just as
in the standard program operation.
In the erase-suspend-read mode, the system can also issue the Autoselect command sequence. Refer to
Write Buffer Programming
To resume the sector erase operation, the system must write the Erase Resume command. The address of
the erase-suspended sector is a “don't-care” when writing this command. Further writes of the Resume
command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing.
Software Functions and Sample Code
The following is a C source code example of using the erase suspend function. Refer to the Spansion Low
Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
The following is a C source code example of using the erase resume function. Refer to the Spansion Low
Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Erase suspend command */
/* Example: Erase resume command */
*( (UINT16 *)base_addr ) = 0x00B0;
*( (UINT16 *)sector_addr ) = 0x0030;
/* The flash needs adequate time in the resume state */
Cycle
Cycle
1
1
Operation
Operation
Write
Write
D a t a
on page 26
S29GL-P MirrorBit
S h e e t
(LLD Function = lld_EraseSuspendCmd)
(LLD Function = lld_EraseResumeCmd)
and the Autoselect
Table 7.10 Erase Suspend
Table 7.11 Erase Resume
Sector Address
Byte Address
Byte Address
Base + XXXh
/* write suspend command
/* write resume command
®
Table 7.35
Flash Family
on page 21
for information on these status bits.
Sector Address
Word Address
Word Address
Base + XXXh
for details.
*/
*/
00B0h
0030h
Data
Data
SEA
33

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