DF2378BVFQ35WV Renesas Electronics America, DF2378BVFQ35WV Datasheet - Page 1131

• Manufacturer Part Number: DF2378BVFQ35WV
• Description: IC H8S/2378 MCU FLASH 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2378BVFQ35WV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 35MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-QFP
• For Use With: EDK2378 - DEV EVAL KIT FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

26.3.4
Table 26.37 A/D Conversion Characteristics
Conditions: V
26.3.5
Table 26.38 D/A Conversion Characteristics
Conditions: V
Item
Resolution
Conversion time
Analog input capacitance
Permissible signal source impedance
Nonlinearity error
Offset error
Full-scale error
Quantization error
Absolute accuracy
Item
Resolution
Conversion time
Absolute accuracy
A/D Conversion Characteristics
D/A Conversion Characteristics
0 V, φ = 8 MHz to 34 MHz, T
T
0 V, φ = 8 MHz to 34 MHz, T
T
a
a
CC
CC
= −40°C to +85°C (wide-range specifications)
= −40°C to +85°C (wide-range specifications)
= 3.0 V to 3.6 V, AV
= 3.0 V to 3.6 V, AV
Min.
8
⎯
⎯
⎯
CC
CC
Typ.
8
⎯
±2.0
⎯
= 3.0 V to 3.6 V, V
= 3.0 V to 3.6 V, V
a
a
Min.
10
7.6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
= −20°C to +75°C (regular specifications),
= −20°C to +75°C (regular specifications),
Max.
8
10
±3.0
±2.0
Rev.7.00 Mar. 18, 2009 page 1063 of 1136
Typ.
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
ref
ref
Section 26 Electrical Characteristics
Unit
Bit
μs
LSB
LSB
= 3.0 V to AV
= 3.0 V to AV
Max.
10
⎯
20
5
±5.5
±5.5
±5.5
±0.5
±6.0
Test Conditions
20 pF capacitive load
2 MΩ resistive load
4 MΩ resistive load
CC
CC
REJ09B0109-0700
, V
, V
SS
SS
Unit
Bit
μs
pF
kΩ
LSB
LSB
LSB
LSB
LSB
= AV
= AV
SS
SS
=
=