DF2378BVFQ35WV Renesas Electronics America, DF2378BVFQ35WV Datasheet - Page 207

IC H8S/2378 MCU FLASH 144-QFP

DF2378BVFQ35WV

Manufacturer Part Number
DF2378BVFQ35WV
Description
IC H8S/2378 MCU FLASH 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2378BVFQ35WV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
35MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-QFP
For Use With
EDK2378 - DEV EVAL KIT FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2378BVFQ35WV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
6.2
Table 6.1 shows the pin configuration of the bus controller.
Table 6.1
Name
Address strobe
Read
High write/write enable
Low write
Chip select 0
Chip select 1
Chip select 2/
row address strobe 2/
row address strobe *
Chip select 3/
row address strobe 3/
column address strobe *
Input/Output Pins
Pin Configuration
1
1
Symbol
AS
RD
HWR/WE
LWR
CS0
CS1
CS2/
RAS2/
RAS *
CS3/
RAS3/
CAS *
1
1
I/O
Output
Output
Output
Output
Output
Output
Output
Output
Function
Strobe signal indicating that normal space
is accessed and address output on
address bus is enabled.
Strobe signal indicating that normal space
is being read.
Strobe signal indicating that normal space
is written to, and upper half (D15 to D8) of
data bus is enabled or DRAM space write
enable signal.
Strobe signal indicating that normal space
is written to, and lower half (D7 to D0) of
data bus is enabled.
Strobe signal indicating that area 0 is
selected.
Strobe signal indicating that area 1 is
selected
Strobe signal indicating that area 2 is
selected, DRAM row address strobe signal
when area 2 is DRAM space or areas 2 to
5 are set as continuous DRAM space, or
row address strobe signal of the
synchronous DRAM when the
synchronous DRAM interface is selected.
Strobe signal indicating that area 3 is
selected, DRAM row address strobe signal
when area 3 is DRAM space, or column
address strobe signal of the synchronous
DRAM when the synchronous DRAM
interface is selected.
Rev.7.00 Mar. 18, 2009 page 139 of 1136
Section 6 Bus Controller (BSC)
REJ09B0109-0700

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