DF2378BVFQ35WV Renesas Electronics America, DF2378BVFQ35WV Datasheet - Page 240

IC H8S/2378 MCU FLASH 144-QFP

DF2378BVFQ35WV

Manufacturer Part Number
DF2378BVFQ35WV
Description
IC H8S/2378 MCU FLASH 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2378BVFQ35WV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
35MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-QFP
For Use With
EDK2378 - DEV EVAL KIT FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2378BVFQ35WV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller (BSC)
6.4.2
Bus Specifications
The external address space bus specifications consist of five elements: bus width, number of
access states, number of program wait states, read strobe timing, and chip select (CS) assertion
period extension states. The bus width and number of access states for on-chip memory and
internal I/O registers are fixed, and are not affected by the bus controller.
Bus Width: A bus width of 8 or 16 bits can be selected with ABWCR. An area for which an 8-bit
bus is selected functions as an 8-bit access space, and an area for which a 16-bit bus is selected
functions as a 16-bit access space. If all areas are designated as 8-bit access space, 8-bit bus mode
is set; if any area is designated as 16-bit access space, 16-bit bus mode is set.
Number of Access States: Two or three access states can be selected with ASTCR. An area for
which 2-state access is selected functions as a 2-state access space, and an area for which 3-state
access is selected functions as a 3-state access space. With the DRAM or synchronous DRAM
interface and burst ROM interface, the number of access states may be determined without regard
to the setting of ASTCR.
When 2-state access space is designated, wait insertion is disabled. When 3-state access space is
designated, it is possible to insert program waits by means of the WTCRA and WTCRB, and
external waits by means of the WAIT pin.
Note: The synchronous DRAM interface is not supported by the H8S/2378 Group.
Number of Program Wait States: When 3-state access space is designated by ASTCR, the
number of program wait states to be inserted automatically is selected with WTCRA and WTCRB.
From 0 to 7 program wait states can be selected. Table 6.2 shows the bus specifications (bus
width, and number of access states and program wait states) for each basic bus interface area.
Rev.7.00 Mar. 18, 2009 page 172 of 1136
REJ09B0109-0700

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