DF2378BVFQ35WV Renesas Electronics America, DF2378BVFQ35WV Datasheet - Page 296

IC H8S/2378 MCU FLASH 144-QFP

DF2378BVFQ35WV

Manufacturer Part Number
DF2378BVFQ35WV
Description
IC H8S/2378 MCU FLASH 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2378BVFQ35WV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
35MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-QFP
For Use With
EDK2378 - DEV EVAL KIT FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2378BVFQ35WV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller (BSC)
6.7.11
When synchronous DRAM with a ×16-bit configuration is connected, DQMU and DQML are
used for the control signals needed for byte access.
Figures 6.49 and 6.50 show the control timing for DQM, and figure 6.51 shows an example of
connection of byte control by DQMU and DQML.
Rev.7.00 Mar. 18, 2009 page 228 of 1136
REJ09B0109-0700
Upper data bus
Lower data bus
Precharge-sel
Address bus
Byte Access Control
SDRAMφ
DQMU
DQML
CKE
RAS
CAS
WE
φ
(Upper Byte Write Access: SDWCD = 0, CAS Latency 2)
Figure 6.49 DQMU and DQML Control Timing
Column address
PALL
T
p
Row address
Row address
ACTV
T
r
High
High
NOP
T
c1
High impedance
Column address
WRIT
T
cl
NOP
T
c2

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