R5F21162SP#U0 Renesas Electronics America, R5F21162SP#U0 Datasheet - Page 238
R5F21162SP#U0
Manufacturer Part Number
R5F21162SP#U0
Description
IC R8C MCU FLASH 8K 20SSOP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/R8C/Tiny/16r
Datasheets
1.R5F211A2SPU0.pdf
(300 pages)
2.R5F21173DSPU0.pdf
(40 pages)
3.R5F21173DSPU0.pdf
(281 pages)
Specifications of R5F21162SP#U0
Core Processor
R8C
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, SIO, UART/USART
Peripherals
LED, POR, Voltage Detect, WDT
Number Of I /o
13
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
20-SSOP
For Use With
R0K521134S000BE - KIT EVAL STARTER FOR R8C/13
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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R8C/16 Group, R8C/17 Group
Rev.2.10
REJ09B0169-0210
Table 19.5
NOTES:
−
−
−
t
−
−
−
−
−
d(SR-ES)
Symbol
1. V
2. Definition of program and erase
3. Endurance to guarantee all electrical characteristics after program and erase.(1 to “Min.” value can be guaranateed).
4. Standard of Block A and Block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000
5. In the case of a system to execute multiple programs, perform one erase after programming as reducing effective reprogram
6. If error occurs during block erase, attempt to execute the clear status register command, then the block erase command at
7. Customers desiring Program/Erase failure rate information should contact their Renesas technical support representative.
8.
9. The data hold time incudes time that the power supply is off or the clock is not supplied.
The program and erase endurance shows an erase endurance for every block.
If the program and erase endurance is “n” times (n = 100, 10000), “n” times erase can be performed for every block.
For example, if performing 1-byte write to the distinct addresses on Block A of 1Kbyte block 1,024 times and then erasing that
block, program and erase endurance is counted as one time.
However, do not perform multiple programs to the same address for one time ease.(disable overwriting).
times are the same as that in program area.
endurance not to leave blank area as possible such as programming write addresses in turn. If programming a set of 16
bytes, programming up to 128 sets and then erasing them one time can reduce effective reprogram endurance. Additionally,
averaging erase endurance for Block A and B can reduce effective reprogram endurance more. To leave erase endurance for
every block as information and determine the restricted endurance are recommended.
least three times until the erase error does not occur.
-40 ° C for D version.
CC
Jan 19, 2006
= AVcc = 2.7 to 5.5V at Topr = − 20 to 85 ° C / − 40 to 85 ° C, unless otherwise specified.
Program/Erase Endurance
Byte Program Time
(Program/Erase Endurance ≤ 1,000 Times)
Byte Program Time
(Program/Erase Endurance > 1,000 Times)
Block Erase Time
(Program/Erase Endurance ≤ 1,000 Times)
Block Erase Time
(Program/Erase Endurance > 1,000 Times)
Time Delay from Suspend Request until
Erase Suspend
Erase Suspend Request Interval
Program, Erase Voltage
Read Voltage
Program, Erase Temperature
Data Hold Time
Flash Memory (Data flash Block A, Block B) Electrical Characteristics
Page 223 of 254
(9)
Parameter
(2)
V
V
V
V
Ambient temperature = 55 ° C
CC
CC
CC
CC
= 5.0 V at T
= 5.0 V at T
= 5.0 V at T
= 5.0 V at T
Conditions
opr
opr
opr
opr
= 25 ° C
= 25 ° C
= 25 ° C
= 25 ° C
10,000
-20
Min.
2.7
2.7
10
20
−
−
−
−
−
19. Electrical Characteristics
(8)
(3)
Standard
Typ.
0.2
0.3
50
65
−
−
−
−
−
−
−
Max.
400
5.5
5.5
85
−
−
9
−
8
−
−
times
year
Unit
ms
ms
µ s
µ s
° C
V
V
s
s
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