DF2265TE13V Renesas Electronics America, DF2265TE13V Datasheet - Page 587

• Manufacturer Part Number: DF2265TE13V
• Description: IC H8S/2265 MCU FLASH 100TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of DF2265TE13V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 13MHz
• Connectivity: I²C, SCI, SmartCard
• Peripherals: LCD, POR, PWM, WDT
• Number Of I /o: 67
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Do not touch the socket adapter or chip during programming: Touching either of these can
cause contact faults and write errors.
Reset the flash memory before turning on the power: To reset the flash memory during
oscillation stabilization period, the reset signal must be input for at least 100 µs.
Apply the reset signal while SWE1 is low to reset the flash memory during its operation: The
reset signal is applied at least 100 µs after the SWE1 bit has been cleared.
V
FWE
MD2, MD1 *
RES
SWE1bit
φ
CC
Notes:
Period during which flash memory access is prohibited
(t
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations
prohibited)
1.
2.
3.
sswe
1
Except when switching modes, the level of the mode pins (MD2, MD1) must be fixed until
power-off by pulling the pins up or down.
See section 25.2.8, Flash Memory Characteristics.
Mode programming setup time t
: Wait time after setting SWE1 bit) *
Figure 20.13 Power-On/Off Timing (Boot Mode)
t
OSC1
SWE1 set
t
Wait time:
MDS
t
MDS
*
MDS
3
*
3
(min.) = 200ns.
2
t
sswe
Programming/
erasing
possible
Rev. 5.00 Sep. 01, 2009 Page 535 of 656
Wait time:
min 0µs
SWE1 cleared
100µs
min 0µs
REJ09B0071-0500
Section 20 ROM