DF2265TE13V Renesas Electronics America, DF2265TE13V Datasheet - Page 588

• Manufacturer Part Number: DF2265TE13V
• Description: IC H8S/2265 MCU FLASH 100TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of DF2265TE13V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 13MHz
• Connectivity: I²C, SCI, SmartCard
• Peripherals: LCD, POR, PWM, WDT
• Number Of I /o: 67
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 20 ROM
Rev. 5.00 Sep. 01, 2009 Page 536 of 656
REJ09B0071-0500
V
FWE
MD2,MD1 *
RES
SWE1 bit
φ
Notes:
CC
Period during which flash memory access is prohibited
(t
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations
prohibited)
sswe
1.
2.
3.
Except when switching modes, the level of the mode pins (MD2, MD1) must be fixed until
power-off by pulling the pins up or down.
See section 25.2.8, Flash Memory Characteristics.
Mode programming setup time t
1
Figure 20.14 Power-On/Off Timing (User Program Mode)
: Wait time after setting SWE1 bit) *
t
OSC1
t
MDS
SWE1 set
Wait time:
*
3
MDS
(min.) = 200ns.
2
t
sswe
Programming/
erasing
possible
Wait time:
SWE1 cleared
100µs
min 0µs