IAR-KSK-IMX25 Freescale Semiconductor, IAR-KSK-IMX25 Datasheet - Page 23
![KIT DEVELOPMENT I.MX257, ARM926](/photos/37/58/375862/imx25kbsbd_sml.jpg)
IAR-KSK-IMX25
Manufacturer Part Number
IAR-KSK-IMX25
Description
KIT DEVELOPMENT I.MX257, ARM926
Manufacturer
Freescale Semiconductor
Series
i.MX25r
Type
MCUr
Datasheets
1.MCIMX25WPDKJ.pdf
(2 pages)
2.IAR-KSK-IMX25.pdf
(154 pages)
3.IAR-KSK-IMX25.pdf
(2 pages)
4.IAR-KSK-IMX25.pdf
(57 pages)
Specifications of IAR-KSK-IMX25
Contents
Board, Cables, CD, Debugger, Power Supply
Processor To Be Evaluated
I.MX257
Processor Series
i.MX25
Data Bus Width
16 bit
Interface Type
UART, JTAG, USB, Ethernet, SD/MMC
Core
ARM926EJ-S
Silicon Manufacturer
Freescale
Core Architecture
ARM
Core Sub-architecture
ARM9
Silicon Core Number
I.MX2
Silicon Family Name
I.MX25
Mcu Supported Families
I.MX25
For Use With/related Products
i.MX25
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- MCIMX25WPDKJ PDF datasheet
- IAR-KSK-IMX25 PDF datasheet #2
- IAR-KSK-IMX25 PDF datasheet #3
- IAR-KSK-IMX25 PDF datasheet #4
- Current page: 23 of 154
- Download datasheet (2Mb)
Note:
1. OVDD = 1.7 V; V
2. OVDD = 1.7 V; V
3. Vin(dc) specifies the allowable DC excursion of each differential input
4. Vid(dc) specifies the input differential voltage required for switching. The minimum value is equal to Vih(dc) - Vil(dc).
5. Vtt is expected to track OVDD/2.
6. Minimum condition: BCS model, 1.95 V, and –40 °C. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition:
7. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition: BCS model, 1.95 V, and 105 °C.
8. The JEDEC SSTL_18 specification (JESD8-15a) for a SSTL interface for class II operation supersedes any specification in
3.5.2
Table 20
Freescale Semiconductor
High-level output voltage
Low-level output voltage
High-level output current for slow
mode
High-level output current for fast
mode
DC input signal voltage(for
differential signal)
DC differential input voltage
Termination voltage
Input current (no pull-up/down)
High-impedance I/O supply
current
High-impedance core supply
current
for parameters V
wcs model, 1.65 V, and 105 °C.
this document.
DC Electrical Characteristics
DC Electrical Characteristics
shows the I/O parameters for GPIO.
GPIO I/O DC Parameters
out
oh
out
Table 19. DDR2 (SSTL_18) I/O DC Electrical Characteristics (continued)
and V
= 280 mV. V
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 8
= 1.42 V. (V
ol
for I/O cells is below
out
out
Icc-ovdd VI = OVDD or 0
Symbol
Icc-vddi
-OVDD)/IOH must be less than 21 W for values of V
/IOL must be less than 21 W for values of V
Vin(dc)
Vid(dc)
Table 20. GPIO DC Electrical Characteristics
Symbol
Vtt
IIN
Voh
Ioh
Ioh
Vol
I
I
VI = VDD or 0
Conditions
VI = OVDD
Ioh = Specified Drive
Iol=Specified Drive
Voh=0.8 × OVDD
Voh=0.8 × OVDD
VI = 0
Test Conditions
Test
Standard Drive
Standard Drive
—
—
—
Max. Drive
Max. Drive
Ioh=–1mA
High Drive
High Drive
Iol=1mA
OVDD/2 – 0.04 OVDD/2 OVDD/2 + 0.04
Min.
–0.3
0.25
—
—
—
OVDD – 0.15
0.8 × OVDD
Min.
–2.0
–4.0
–8.0
–4.0
–6.0
–8.0
—
out
between 0 V and 280 mV. Simulation circuit
Typ.
—
—
—
—
—
out
Typ.
—
—
—
—
between OVDD and OVDD-0.28 V.
OVDD + 0.3
OVDD+0.6
0.2 × OVDD
Max.
1210
110
980
60
Max.
0.15
—
—
—
Units
Units Notes
nA
nA
nA
V
V
mA
mA
V
V
Notes
3
4
5
9
9
—
—
1
1
23
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