M52S128324A-7BG ELITE SEMICONDUCTOR, M52S128324A-7BG Datasheet - Page 18

• Manufacturer Part Number: M52S128324A-7BG
• Description: IC, SDRAM, 128MBIT, 143MHZ, FBGA-90
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of M52S128324A-7BG

• Memory Type: DRAM - Sychronous
• Memory Configuration: 2M X 16
• Ic Interface Type: Parallel
• Memory Case Style: FBGA
• No. Of Pins: 90
• Operating Temperature Range: 0°C To +70°C
• Frequency: 133MHz
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Page Size: 128MB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ESMT
Self refresh entry command
remains low. When CKE goes to high, the M52S128324A exits the self refresh mode.
internally, so there is no need for external control.
Before executing self refresh, all banks must be precharged.
Burst stop command
This command terminates the current burst operation.
Burst stop is valid at every burst length.
No operation
this command.
Elite Semiconductor Memory Technology Inc.
After the command execution, self refresh operation continues while CKE
During self refresh mode, refresh interval and refresh operation are performed
This command is not a execution command. No operations begin or terminate by
( CS , RAS , CAS , CKE = Low , WE = High)
( CS , WE = Low, RAS , CAS = High)
( CS = Low , RAS , CAS , WE = High)
BA0, BA1
(Bank select)
Publication Date: Mar. 2008
Revision: 1.3
BA0, BA1
(Bank select)
BA0, BA1
(Bank select)
Fig. 8 Burst stop command
RAS
RAS
CKE
M52S128324A
CKE
CAS
RAS
CLK
CKE
CAS
A10
CLK
CAS
CLK
Add
A10
A10
Add
WE
Fig. 7 Self refresh entry
CS
Add
WE
WE
CS
CS
Fig. 9 No operation
command
H
H
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