M52S128324A-7BG ELITE SEMICONDUCTOR, M52S128324A-7BG Datasheet - Page 42

• Manufacturer Part Number: M52S128324A-7BG
• Description: IC, SDRAM, 128MBIT, 143MHZ, FBGA-90
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of M52S128324A-7BG

• Memory Type: DRAM - Sychronous
• Memory Configuration: 2M X 16
• Ic Interface Type: Parallel
• Memory Case Style: FBGA
• No. Of Pins: 90
• Operating Temperature Range: 0°C To +70°C
• Frequency: 133MHz
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Page Size: 128MB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ESMT
Active/Precharge Power Down Mode @ CAS Latency = 2, Burst Length = 4
A 1 0 / A P
*Note:
Elite Semiconductor Memory Technology Inc.
C L O C K
A D D R
C K E
B A 1
B A 0
D Q M
R A S
C A S
W E
D Q
C S
1. Both banks should be in idle state prior to entering precharge power down mode.
2. CKE should be set high at least 1CLK + t
0
P o w e r - D o w n
1
P r e c h a r g e
E n t r y
* N o t e 1
t
S S
2
* N o t e 3
3
4
P o w e r - D o w n
P r e c h a r g e
5
E x i t
R o w A c t i v e
6
R a
R a
* N o t e 2
P o w e r - d o w n
SS
7
A c t i v e
E n t r y
prior to Row active command.
t
S S
8
9
t
S S
P o w e r - d o w n
1 0
A c t i v e
E x i t
1 1
R e a d
C a
1 2
1 3
Publication Date: Mar. 2008
Revision: 1.3
Q a 0
1 4
P r e c h a r g e
M52S128324A
Q a 1
1 5
t
S H Z
Q a 2
1 6
1 7
: D o n ' t c a r e
1 8
42/47
1 9