M52S128324A-7BG ELITE SEMICONDUCTOR, M52S128324A-7BG Datasheet - Page 33

• Manufacturer Part Number: M52S128324A-7BG
• Description: IC, SDRAM, 128MBIT, 143MHZ, FBGA-90
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of M52S128324A-7BG

• Memory Type: DRAM - Sychronous
• Memory Configuration: 2M X 16
• Ic Interface Type: Parallel
• Memory Case Style: FBGA
• No. Of Pins: 90
• Operating Temperature Range: 0°C To +70°C
• Frequency: 133MHz
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Page Size: 128MB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

A10/AP
DQ
ADDR
CLOCK
CL=2
CL=3
ESMT
Read & Write Cycle at Same Bank @ Burst Length = 4
*Note :
Elite Semiconductor Memory Technology Inc.
DQM
CAS
RAS
BA1
BA0
WE
CKE
CS
0
Row Active
1. Minimum row cycle times is required to complete internal DRAM operation.
2. Row precharge can interrupt burst on any cycle. [CAS Latency-1] number of valid output data is available after Row
3. Output will be Hi-Z after the end of burst. (1,2,4,8 & Full page bit burst)
(A- Ban k)
Ra
precharge. Last valid output will be Hi-Z (t
Ra
1
t
2
RCD
3
(A- Ban k)
Ca
Read
4
5
t
Qa0
S AC
6
t
RC
t
t
*Note1
O H
S AC
Qa0
Qa1
7
Precharge
(A-Ban k)
*Note2
t
O H
Qa1
Qa2
SHZ
8
) after the clock.
Qa2
Qa3
9
t
S H Z
HIGH
Qa3
10
Row Active
(A- Bank)
*Note3
t
S H Z
Rb
Rb
11
*Note3
12
13
(A- Bank)
W rite
Db0
Db0
Cb
14
Publication Date: Mar. 2008
Revision: 1.3
Db1
Db1
15
M52S128324A
Db2
Db2
16
Db3
Db3
17
t
t
RDL
RDL
18
Precharge
(A-Bank)
: Don't care
19
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