M52S128324A-7BG ELITE SEMICONDUCTOR, M52S128324A-7BG Datasheet - Page 40

• Manufacturer Part Number: M52S128324A-7BG
• Description: IC, SDRAM, 128MBIT, 143MHZ, FBGA-90
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of M52S128324A-7BG

• Memory Type: DRAM - Sychronous
• Memory Configuration: 2M X 16
• Ic Interface Type: Parallel
• Memory Case Style: FBGA
• No. Of Pins: 90
• Operating Temperature Range: 0°C To +70°C
• Frequency: 133MHz
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Page Size: 128MB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

A 1 0 / A P
C L O C K
D Q
A D D R
ESMT
Read interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length = Full page
*Note : 1. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Elite Semiconductor Memory Technology Inc.
C L = 2
C L = 3
C K E
D Q M
C A S
R A S
W E
B A 1
B A 0
C S
2. Burst stop is valid at every burst length.
R o w A c t i v e
0
( A - B a n k )
Both cases are illustrated above timing diagram. See the lable 1,2 on them.
But at burst write, Burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of “Full page write burst stop cycles”.
R A a
R A a
1
2
3
( A - B a n k )
R e a d
* N o t e 1
C A a
4
5
Q A a 0 Q A a 1
6
Q A a 0 Q A a 1
7
Q A a 2 Q A a 3 Q A a 4
B u r s t S t o p
* N o t e 2
8
Q A a 2 Q A a 3 Q A a 4
9
H I G H
10
( A - B a n k )
1
R e a d
* N o t e 1
C A b
11
2
12
Q A b 0
13
Q A b 1
Q A b 0
14
Publication Date: Mar. 2008
Revision: 1.3
Q A b 2
Q A b 1
M52S128324A
15
Q A b 3 Q A b 4 Q A b 5
Q A b 2
P r e c h a r g e
16
( A - B a n k )
Q A b 3 Q A b 4 Q A b 5
17
18
1
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19
2