M52S128324A-7BG ELITE SEMICONDUCTOR, M52S128324A-7BG Datasheet - Page 20

• Manufacturer Part Number: M52S128324A-7BG
• Description: IC, SDRAM, 128MBIT, 143MHZ, FBGA-90
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of M52S128324A-7BG

• Memory Type: DRAM - Sychronous
• Memory Configuration: 2M X 16
• Ic Interface Type: Parallel
• Memory Case Style: FBGA
• No. Of Pins: 90
• Operating Temperature Range: 0°C To +70°C
• Frequency: 133MHz
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Page Size: 128MB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ESMT
3. CAS Interrupt (I)
Elite Semiconductor Memory Technology Inc.
*Note : 1. By “interrupt” is meant to stop burst read/write by external before the end of burst.
D Q ( C L 2 )
D Q ( C L 3 )
1 ) R e a d i n t e r r u p t e d b y R e a d ( B L = 4 )
2 ) W r i t e i n t e r r u p t e d b y W r i t e ( B L = 2 )
C L K
A D D
C M D
C M D
A D D
C L K
D Q
2. t
3. t
By ” CAS interrupt ”, to stop burst read/write by CAS access ; read and write.
CCD
CDL
: Last data in to new column address delay. (=1CLK)
: CAS to CAS delay. (=1CLK)
D A 0
W R
R D
A
t
* N o t e 2
A
t
t
* N o t e 3
C C D
C C D * N o t e 2
C D L
W R
D B 0
R D
B
B
Q A 0
D B 1
* N o t e 1
Q B 0
Q A 0
Q B 1
Q B 0
Q B 2
Q B 1
Q B 3
Q B 2
Q B 3
D Q ( C L 2 )
D Q ( C L 3 )
3 ) W r i t e i n t e r r u p t e d b y R e a d ( B L = 2 )
D A 0
D A 0
W R
A
t
t
* N o t e 3
C C D * N o t e 2
C D L
R D
B
Publication Date: Mar. 2008
Revision: 1.3
M52S128324A
D Q 0
D Q 1
D Q 0
D Q 1
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