MT9VDDT6472HY-40B Micron Semiconductor Products, MT9VDDT6472HY-40B Datasheet - Page 13

• Manufacturer Part Number: MT9VDDT6472HY-40B
• Description: 256mb, 512mb, 1gb X72, Ecc, Sr 200-pin Ddr Sodimm
• Manufacturer: Micron Semiconductor Products

Table 12: I
DDR SDRAM components only
Notes: 1–5, 8, 10, 12, 46; notes appear on pages 18–20; 0°C ≤ T
pdf: 09005aef811d6080, source: 09005aef806e057b
DDA9C32_64_128x72HG.fm - Rev. B 06/05 EN
PARAMETER/CONDITION
OPERATING CURRENT: One device bank; Active-Precharge;
(MIN);
cyle; Address and control inputs changing once every two clock cycles
OPERATING CURRENT: One device bank; Active -Read Precharge; Burst =
4;
inputs changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks idle;
Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
MIN; CKE = HIGH; Address and other control inputs changing once per
clock cycle. V
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank active;
Power-down mode;
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device bank;
Active-Precharge;
inputs changing twice per clock cycle; Address and other control inputs
changing once per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One bank
active; Address and control inputs changing once per clock cycle;
t
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One device
bank active; Address and control inputs changing once per clock cycle;
t
AUTO REFRESH CURRENT
SELF REFRESH CURRENT: CKE ≤ 0.2V
OPERATING CURRENT: Four device bank interleaving READs (BL = 4) with
auto precharge,
inputs change only during Active READ, or WRITE commands
CK (MIN); I
CK =
t
RC =
t
CK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle
t
CK =
t
RC (MIN);
OUT
t
IN
CK (MIN); DQ, DM and DQS inputs changing once per clock
= V
= 0mA
DD
t
RC =
t
REF
t
RC =
CK =
t
t
Specifications and Conditions – 256MB
CK =
CK =
for DQ, DQS, and DM
t
RC (MIN);
t
RAS (MAX);
t
CK (MIN); I
t
t
CK (MIN); CKE = (LOW)
CK (MIN); CKE = LOW
t
CK =
OUT
t
CK =
t
CK (MIN); Address and control
= 0mA; Address and control
t
CK (MIN); DQ, DM andDQS
t
t
REFC =
REFC = 7.8125µs
t
RFC (MIN)
t
RC =
t
256MB, 512MB, 1GB (x72, ECC, SR)
13
CK =
A
≤ +70°C; V
t
RC
t
t
CK =
CK
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
SYMBOL
I
= V
I
I
I
I
I
I
DD4W
I
I
DD3N
I
DD5A
I
I
DD2P
DD3P
DD4R
DD2F
DD0
DD1
DD5
DD6
DD7
DD
200-PIN DDR SODIMM
Q = +2.6V ±0.1V
MAX
1,215
1,530
1,800
1,755
2,340
4,230
-40B
540
360
630
36
54
36
©2005 Micron Technology, Inc. All rights reserved.
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
21,27, 42
NOTES
21, 27 ,
20, 40
20, 40
20, 40
24, 42
20, 41
20,42
42
42
20
9