MT9VDDT6472HY-40B Micron Semiconductor Products, MT9VDDT6472HY-40B Datasheet - Page 24

• Manufacturer Part Number: MT9VDDT6472HY-40B
• Description: 256mb, 512mb, 1gb X72, Ecc, Sr 200-pin Ddr Sodimm
• Manufacturer: Micron Semiconductor Products

Table 17: EEPROM Device Select Code
Most significant bit (b7) is sent first
Table 18: EEPROM Operating Modes
pdf: 09005aef811d6080, source: 09005aef806e057b
DDA9C32_64_128x72HG.fm - Rev. B 06/05 EN
SDA OUT
SELECT CODE
MODE
Memory Area Select Code (two arrays)
Protection Register Select Code
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SDA IN
SCL
t SU:STA
Figure 14: SPD EEPROM Timing Diagram
RW BIT
t F
1
0
1
1
0
0
t HD:STA
t LOW
t AA
V
V
V
V
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
b7
IL
IL
IL
IL
t HIGH
1
0
DEVICE TYPE IDENTIFIER
t HD:DAT
BYTES
≤ 16
256MB, 512MB, 1GB (x72, ECC, SR)
24
≥ 1
1
1
1
1
b6
0
1
t DH
INITIAL SEQUENCE
START, Device Select, RW = ‘1’
START, Device Select, RW = ‘0’, Address
reSTART, Device Select, RW = ‘1’
Similar to Current or Random Address Read
START, Device Select, RW = ‘0’
START, Device Select, RW = ‘0’
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b5
1
1
t SU:DAT
b4
0
0
200-PIN DDR SODIMM
SA2
SA2
b3
CHIP ENABLE
©2005 Micron Technology, Inc. All rights reserved.
SA1
SA1
b2
t SU:STO
t BUF
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0