MT9VDDT6472HY-40B Micron Semiconductor Products, MT9VDDT6472HY-40B Datasheet - Page 14

• Manufacturer Part Number: MT9VDDT6472HY-40B
• Description: 256mb, 512mb, 1gb X72, Ecc, Sr 200-pin Ddr Sodimm
• Manufacturer: Micron Semiconductor Products

Table 13: I
DDR SDRAM components only
Notes: 1–5, 8, 10, 12, 46; notes appear on pages 18–20; 0°C ≤ T
pdf: 09005aef811d6080, source: 09005aef806e057b
DDA9C32_64_128x72HG.fm - Rev. B 06/05 EN
PARAMETER/CONDITION
OPERATING CURRENT: One device bank; Active-Precharge;
t
Address and control inputs changing once every two clock cycles
OPERATING CURRENT: One device bank; Active -Read Precharge; Burst = 4;
t
changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks idle;
Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
CKE = HIGH; Address and other control inputs changing once per clock
cycle. V
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank active;
Power-down mode;
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device bank;
Active-Precharge;
inputs changing twice per clock cycle; Address and other control inputs
changing once per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One bank active;
Address and control inputs changing once per clock cycle;
I
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One device
bank active; Address and control inputs changing once per clock cycle;
=
AUTO REFRESH CURRENT
SELF REFRESH CURRENT: CKE ≤ 0.2V
OPERATING CURRENT: Four device bank interleaving READs (BL = 4) with
auto precharge,
inputs change only during Active READ, or WRITE commands
CK =
RC =
OUT
t
CK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle
= 0mA
t
t
RC (MIN);
CK (MIN); DQ, DM and DQS inputs changing once per clock cyle;
IN
= V
REF
DD
for DQ, DQS, and DM
t
t
CK =
RC =
t
RC =
t
t
Specifications and Conditions – 512MB
CK =
CK =
t
t
CK (MIN); I
RC (MIN);
t
RAS (MAX);
t
t
CK (MIN); CKE = (LOW)
CK (MIN); CKE = LOW
t
OUT
CK =
t
CK =
= 0mA; Address and control inputs
t
CK (MIN); Address and control
t
CK (MIN); DQ, DM andDQS
t
t
REFC =
REFC = 7.8125µs
t
RFC (MIN)
t
t
CK =
RC =
t
256MB, 512MB, 1GB (x72, ECC, SR)
14
CK =
A
≤ +70°C; V
t
t
CK (MIN);
RC (MIN);
t
CK MIN;
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
CK
DD
SYMBOL
= V
I
I
I
I
I
I
I
DD4W
I
I
DD3N
I
DD5A
I
I
DD2P
DD3P
DD4R
DD2F
DD0
DD1
DD5
DD6
DD7
DD
200-PIN DDR SODIMM
Q = +2.6V ±0.1V
MAX
1,395
1,665
1,710
1,755
3,105
4,050
-40B
495
405
540
45
99
45
©2005 Micron Technology, Inc. All rights reserved.
UNITS NOTES
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
21, 27,
20, 40
20, 40
21,27,
20, 40
20, 42
23, 42
20, 41
42
43
42
20
9