MT9VDDT6472HY-40B Micron Semiconductor Products, MT9VDDT6472HY-40B Datasheet - Page 25

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MT9VDDT6472HY-40B

Manufacturer Part Number
MT9VDDT6472HY-40B
Description
256mb, 512mb, 1gb X72, Ecc, Sr 200-pin Ddr Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet

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Table 19: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to V
Table 20: Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to V
NOTE:
pdf: 09005aef811d6080, source: 09005aef806e057b
DDA9C32_64_128x72HG.fm - Rev. B 06/05 EN
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
OUTPUT LOW VOLTAGE: I
INPUT LEAKAGE CURRENT: V
OUTPUT LEAKAGE CURRENT: V
STANDBY CURRENT:
SCL = SDA = V
POWER SUPPLY CURRENT: SCL clock frequency = 100 KHz
PARAMETER/CONDITION
SCL LOW to SDA data-out valid
Time the bus must be free before a new transition can start
Data-out hold time
SDA and SCL fall time
Data-in hold time
Start condition hold time
Clock HIGH period
Noise suppression time constant at SCL, SDA inputs
Clock LOW period
SDA and SCL rise time
SCL clock frequency
Data-in setup time
Start condition setup time
Stop condition setup time
WRITE cycle time
1. To avoid spurious START and STOP conditions, a minimum delay is placed between SCL = 1 and the falling or rising
2. This parameter is sampled.
3. For a reSTART condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
edge of SDA.
the EEPROM internal erase/program cycle. During the WRITE cycle, the EEPROM bus interface circuit is disabled, SDA
remains HIGH due to pull-up resistor, and the EEPROM does not respond to its slave address.
DD
- 0.3V; All other inputs = V
OUT
SS
SS
IN
; V
; V
= 3mA
OUT
= GND to V
DDSPD
DDSPD
= GND to V
= +2.3V to +3.6V
= +2.3V to +3.6V
t
WRC) is the time from a valid stop condition of a write sequence to the end of
DD
SS
or V
DD
DD
256MB, 512MB, 1GB (x72, ECC, SR)
25
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
V
SYMBOL
t
t
t
t
t
HD:DAT
HD:STA
SU:DAT
SU:STO
DDSPD
SU:STA
V
t
V
t
t
I
V
I
I
t
HIGH
I
LOW
f
WRC
LO
CC
t
t
SB
OL
BUF
LI
IH
SCL
AA
DH
IL
t
t
t
F
R
I
200-PIN DDR SODIMM
V
DD X
MIN
MIN
200
100
0.2
1.3
0.6
0.6
1.3
0.6
0.6
2.3
-1
0
0.7
MAX
©2005 Micron Technology, Inc. All rights reserved.
300
400
0.9
0.3
50
10
V
V
DD
DD
MAX
3.6
0.4
10
10
30
2
UNITS
+ 0.5
x 0.3
KHz
ms
µs
µs
ns
ns
µs
µs
µs
ns
µs
µs
ns
µs
µs
NOTES
UNITS
mA
µA
µA
µA
V
V
V
V
1
2
2
3
4

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