MT9VDDT6472HY-40B Micron Semiconductor Products, MT9VDDT6472HY-40B Datasheet - Page 17

• Manufacturer Part Number: MT9VDDT6472HY-40B
• Description: 256mb, 512mb, 1gb X72, Ecc, Sr 200-pin Ddr Sodimm
• Manufacturer: Micron Semiconductor Products

Table 16: DDR SDRAM Component Electrical Characteristics and
Notes: 1–5, 12-15, 28; notes appear on pages 18–20; 0°C ≤ T
pdf: 09005aef811d6080, source: 09005aef806e057b
DDA9C32_64_128x72HG.fm - Rev. B 06/05 EN
AC CHARACTERISTICS
PARAMETER
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Recommended AC Operating Conditions (Continued)
DD
A
256MB, 512MB, 1GB (x72, ECC, SR)
17
≤ +70°C; V
SYMBOL
t
t
t
t
t
WPST
t
t
XSNR
XSRD
REFC
t
WTR
REFI
VTD
WR
na
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
= V
MIN
200
0.4
15
75
DD
2
0
t
QH -
Q = +2.6V ±0.1V
-40B
200-PIN DDR SODIMM
t
DQSQ
MAX
70.3
0.6
7.8
©2005 Micron Technology, Inc. All rights reserved.
UNITS
t
t
t
ns
ns
µs
µs
ns
ns
CK
CK
CK
NOTES
22
17
21
21