mt48h16m32lfcm-75-it Micron Semiconductor Products, mt48h16m32lfcm-75-it Datasheet - Page 14

• Manufacturer Part Number: mt48h16m32lfcm-75-it
• Description: 512mb 32 Meg X 16, 16 Meg X 32 Mobile Sdram Features
• Manufacturer: Micron Semiconductor Products

Electrical Specifications
Absolute Maximum Ratings
Table 4:
Table 5:
Table 6:
PDF: 09005aef82ea3742/Source: 09005aef82ea371a
512mb_mobile_sdram_y47m__2.fm - Rev. B 4/08 EN
Parameter/Condition
Parameter
Voltage on V
Voltage on inputs, NC or I/O balls relative to V
Storage temperature plastic
Supply voltage
I/O supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Output high voltage
Output low voltage
Input leakage current:
Any input 0V ≤ V
Output leakage current: DQs are disabled; 0V ≤ V
Operating temperature:
Commercial
Industrial
Input capacitance: CLK
Input capacitance: All other input-only balls
Input/output capacitance: DQs
DD
Absolute Maximum Ratings
DC Electrical Characteristics and Operating Conditions
Notes: 1 and 2 apply to all parameters and conditions; V
Capacitance
Note 1 applies to all parameters and conditions.
Voltage/Temperature
/V
IN
DD
Notes:
Notes:
Notes:
≤ V
Q supply relative to V
DD
(All other balls not under test = 0V)
Stresses greater than those listed in Table 4 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
1. V
1. All voltages referenced to V
2. A full initialization sequence is required before proper device operation is ensured
3. V
4. I
1. This parameter is sampled. V
be greater than one third of the cycle rate. V
width ≤ 3ns.
f = 1 MHz.
OUT
DD
IH
overshoot: V
and V
= 4mA for full drive strength. Other drive strengths require appropriate scale.
DD
SS
1
Q must be within 300mV of each other at all times. V
SS
IH
OUT
(MAX) = V
≤ V
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
V
Symbol
DD
DD
T
V
/V
STG
Q
SS
IN
14
DD
DD
DD
.
, V
Q + 2V for a pulse width ≤ 3ns, and the pulse width cannot
Q
DD
Symbol
Q = +1.8V; T
Symbol
V
V
V
V
V
V
I
DD
DD Q
T
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OZ
DD
OH
I
C
OL
C
C
IH
A
A
IL
I
IO
I1
I2
/V
Min
–0.5
–0.5
–55
DD
IL
Q = 1.7–1.95V
0.8 × V
0.9 × V
undershoot: V
A
Min
–0.3
–1.0
–1.5
= 25°C; ball under test biased at 0.9V,
–40
1.7
1.7
0
–
Min
DD
DD
2.0
2.0
2.5
Q
Q V
Electrical Specifications
DD
+150
Max
IL
+2.4
+2.4
Max
+0.3
1.95
1.95
(MIN) = –2V for a pulse
+70
+85
Q + 0.3
0.2
1.0
1.5
©2007 Micron Technology, Inc. All rights reserved.
–
DD
Max
Q must not exceed V
5.0
5.0
6.0
Units
µA
µA
°C
V
V
V
V
V
V
Units
°C
V
Units
pF
pF
pF
Notes
3
3
4
4
DD
.