mt48h16m32lfcm-75-it Micron Semiconductor Products, mt48h16m32lfcm-75-it Datasheet - Page 63

• Manufacturer Part Number: mt48h16m32lfcm-75-it
• Description: 512mb 32 Meg X 16, 16 Meg X 32 Mobile Sdram Features
• Manufacturer: Micron Semiconductor Products

WRITE with Auto Precharge
Figure 42:
Figure 43:
PDF: 09005aef82ea3742/Source: 09005aef82ea3752
sdr_mobile_sdram_cmd_op_timing_dia_fr4.08__4.fm - Rev. B 4/08 EN
Internal
States
Internal
States
WRITE with Auto Precharge Interrupted by a READ
WRITE with Auto Precharge Interrupted by a WRITE
Notes:
Notes:
Command
Command
Address
Address
Bank m
Bank m
Bank n
Bank n
CLK
CLK
DQ
DQ
1. Interrupted by a READ (with or without auto precharge): A READ to bank m will inter-
2. Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will
1. DQM is LOW.
1. DQM is LOW.
rupt a WRITE on bank n when registered, with the data-out appearing CL later. The
precharge to bank n will begin after
bank m is registered. The last valid WRITE to bank n will be data-in registered one
clock prior to the READ to bank m (see Figure 42).
interrupt a WRITE on bank n when registered. The precharge to bank n will begin
after
valid data WRITE to bank n will be data registered one clock prior to a WRITE to
bank m (see Figure 43).
Page active
Page active
T0
T0
NOP
NOP
t
WR is met, where
WRITE - AP
WRITE - AP
Bank n,
Bank n,
Page active
BANK n
BANK n
Page active
T1
Col a
D
T1
Col a
D
a
a
IN
IN
WRITE with burst of 4
WRITE with burst of 4
a + 1
a + 1
T2
T2
D
D
NOP
NOP
IN
IN
t
WR begins when the WRITE to bank m is registered. The last
63
Bank m,
READ - AP
a + 2
T3
T3
Col d
BANK m
D
NOP
IN
Interrupt burst, write-back
t
WR - Bank n
READ with burst of 4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
WR is met, where
WRITE - AP
Bank m,
BANK m
Col d
T4
T4
D
NOP
CL = 3 (bank m)
t
d
IN
Interrupt burst, write-back
WR - Bank n
WRITE with burst of 4
T5
T5
d + 1
NOP
NOP
D
IN
precharge
t
RP - Bank n
t
T6
T6
WR begins when the READ to
d + 2
D
NOP
NOP
D
OUT
d
IN
Precharge
t RP - Bank n
©2007 Micron Technology, Inc. All rights reserved.
SDR Mobile SDRAM
Don’t Care
Don’t Care
T7
T7
d + 3
D
d + 1
NOP
NOP
D
t WR - Bank m
t RP - Bank m
OUT
IN
Write-back
Operations