mt48h16m32lfcm-75-it Micron Semiconductor Products, mt48h16m32lfcm-75-it Datasheet - Page 18

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mt48h16m32lfcm-75-it

Manufacturer Part Number
mt48h16m32lfcm-75-it
Description
512mb 32 Meg X 16, 16 Meg X 32 Mobile Sdram Features
Manufacturer
Micron Semiconductor Products
Datasheet
Table 10:
PDF: 09005aef82ea3742/Source: 09005aef82ea371a
512mb_mobile_sdram_y47m__2.fm - Rev. B 4/08 EN
AC Characteristics
Parameter
Access time from CLK (positive edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out High-Z time
Data-out Low-Z time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE command period
ACTIVE-to-READ or WRITE delay
Refresh period (8,192 rows)
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b command
Transition time
WRITE recovery time
Exit SELF REFRESH-to-ACTIVE command
Electrical Characteristics and Recommended AC Operating Conditions
Notes 1–5 apply to all parameters; notes begin below Table 11 on page 19.
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AC
AH
AS
CH
CL
CK
CKH
CKS
CMH
CMS
DH
DS
HZ
LZ
OH
OH
RAS
RC
RCD
REF
RFC
RP
RRD
T
WR
XSR
Symbol
18
N
Min
97.5
120
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1.5
2.5
2.5
9.6
1.5
1.5
1.5
2.5
1.8
0.3
42
60
18
18
15
1
6
1
1
1
1
2
-6
120,000
Max
1.2
64
5
8
5
8
Min
67.5
19.2
97.5
19.2
Electrical Specifications
120
1.5
2.5
2.5
7.5
9.6
1.5
1.5
1.5
2.5
1.8
0.3
45
15
1
1
1
1
1
2
-75
©2007 Micron Technology, Inc. All rights reserved.
120,000
Max
5.4
5.4
1.2
64
8
8
Unit
t
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
ns
ns
ns
Notes
10
11
6
7
8
9

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