mt48h16m32lfcm-75-it Micron Semiconductor Products, mt48h16m32lfcm-75-it Datasheet - Page 5

• Manufacturer Part Number: mt48h16m32lfcm-75-it
• Description: 512mb 32 Meg X 16, 16 Meg X 32 Mobile Sdram Features
• Manufacturer: Micron Semiconductor Products

Figure 1:
General Description
PDF: 09005aef82ea3742/Source: 09005aef82ea371a
512mb_mobile_sdram_y47m__2.fm - Rev. B 4/08 EN
Micron Technology
Product Family
48 = Mobile SDR SDRAM
Operating Voltage
H = 1.8V/1.8V
Configuration
32 Meg x 16
16 Meg x 32
Addressing
LF = Mobile standard addressing
LG = Reduced page-size option
512Mb Mobile SDRAM Part Numbering
The Micron
memory containing 536,870,912-bits. It is internally configured as a quad-bank DRAM
with a synchronous interface (all signals are registered on the positive edge of the clock
signal, CLK). Each of the x16’s 134,217,728-bit banks is organized as 8,192 rows by 1K
columns by 16 bits. Each of the x32’s 134,217,728-bit banks is organized as 8,192 rows by
512 columns by 32 bits. In a reduced page-size option, each of the x32’s 134,217,728-bit
banks is organized as 16,384 rows by 256 columns x32 bits.
SDRAMs offer substantial advances in DRAM operating performance, including the
ability to synchronously burst data at a high data rate with automatic column-address
generation, the ability to interleave between internal banks in order to hide precharge
time, and the capability to randomly change column addresses on each clock cycle
during a burst access.
MT
48
®
512Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access
H 32M16 LF
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
5
BF
-75
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IT
:B
Design Revision
:B = Second generation
Operating Temperature
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85°C)
Cycle Time
-75 = 7.5ns,
Package Codes
BF = 8mm x 9mm VFBGA “green”
CM = 10mm x 13mm VFBGA “green”
-6 = 6ns,
t
CK CL = 3
t
General Description
CK CL = 3
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