mt47h64m16hw-3 Micron Semiconductor Products, mt47h64m16hw-3 Datasheet - Page 34
mt47h64m16hw-3
Manufacturer Part Number
mt47h64m16hw-3
Description
1gb X4, X8, X16 Ddr2 Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT47H64M16HW-3.pdf
(125 pages)
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Table 13:
DQ output access
time from CK/CK#
DQS–DQ skew,
DQS to last DQ
valid, per group,
per access
DQ hold from next
DQS strobe
DQ–DQS hold, DQS
to first DQ not
valid
CK/CK# to DQ, DQS
High-Z
CK/CK# to DQ
Low-Z
Data valid output
window
DQ and DM input
setup time to DQS
DQ and DM input
hold time to DQS
DQ and DM input
setup time to DQS
DQ and DM input
hold time to DQS
DQ and DM input
pulse width
Parameter
AC Characteristics
AC Operating Specifications and Conditions for -187E, -25E, -3E, -3, -37E, and -5E Speeds (Sheet 4 of 7)
Not all speed grades listed may be supported for this device; refer to the title page for speeds supported;
Notes: 1–5 (page 38) apply to the entire table; V
Symbol
t
t
DQSQ
DVW
t
t
t
DIPW
t
t
t
t
t
QHS
t
DH
DH
DS
DS
QH
LZ
AC
HZ
2
b
a
b
a
–350
Min
200
200
75
–
–
0
-187E
Max
+350
175
250
–
–
–
–
–400
Min
125
250
250
50
–
–
-25E
Max
+400
200
300
–
–
–
–
DD
Q = +1.8V ±0.1V, V
–400
Min
125
250
250
50
–
–
-25
+400
Max
200
300
MIN = 2 ×
–
–
–
–
MIN =
MAX =
MAX =
MIN =
MIN = 0.35 ×
MAX = n/a
MAX = n/a
MAX = n/a
MIN = n/a
–450
Min
100
175
300
300
–
–
t
QH -
DD
t
t
t
HP -
-3E
AC (MAX)
AC (MAX)
t
= +1.8V ±0.1V
AC (MIN)
Max
+450
t
240
340
t
DQSQ
QHS
–
–
–
–
t
CK
–450
Min
100
175
300
300
–
–
-3
+450
Max
240
340
–
–
–
–
–500
Min
100
225
350
350
–
–
-37E
Max
+500
300
400
–
–
–
–
–600
Min
150
275
400
400
–
–
-5E
Max
+600
350
450
–
–
–
–
Units Notes
t
ps
ps
ps
ps
ps
ns
ps
ps
ps
ps
CK
ps
27, 28
21, 29
21, 22
26, 27
30, 31
30, 31
30, 31
30, 31
18, 32
26, 27
19,
19,
26,
26,
26,
26,
19
28
26,