mt47h64m16hw-3 Micron Semiconductor Products, mt47h64m16hw-3 Datasheet - Page 52

• Manufacturer Part Number: mt47h64m16hw-3
• Description: 1gb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

AC Overshoot/Undershoot Specification
Table 27:
Table 28:
Figure 23:
Figure 24:
PDF: 09005aef8117c187/Source: 09005aef821aed36
DDR2_x4x8x16_Core2.fm - 1Gb DDR2: Rev. N; Core DDR2: Rev. C 4/08 EN
Parameter
Parameter
Maximum peak amplitude allowed for overshoot area (see
Figure 23)
Maximum peak amplitude allowed for undershoot area
(see Figure 24)
Maximum overshoot area above V
Maximum undershoot area below V
Maximum peak amplitude allowed for overshoot area (see
Figure 23)
Maximum peak amplitude allowed for undershoot area
(see Figure 24)
Maximum overshoot area above V
Maximum undershoot area below V
Address and Control Balls
Applies to address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, ODT
Clock, Data, Strobe, and Mask Balls
Applies to DQ, DQS, DQS#, RDQS, RDQS#, UDQS, UDQS#, LDQS, LDQS#, DM, UDM, LDM
Overshoot
Undershoot
Some revisions will support the 0.9V maximum average amplitude instead of the 0.5V
maximum average amplitude shown in Tables 27 and 28.
V
V
DD
V
SS
SS
/V
/V
DD
DD
/V
DD
SS
SS
SS
SS
Q (see Figure 23)
Q
Q
(see Figure 23)
Q
Q (see Figure 24)
(see Figure 24)
Maximum amplitude
Maximum amplitude
52
0.19 Vns
0.19 Vns
0.5 Vns
0.5 Vns
-187E
-187E
0.50V
0.50V
0.50V
0.50V
AC Overshoot/Undershoot Specification
Time (ns)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Time (ns)
-25/-25E
0.23 Vns
0.23 Vns
-25/-25E
0.66 Vns
0.66 Vns
0.50V
0.50V
0.50V
0.50V
1Gb: x4, x8, x16 DDR2 SDRAM
Specification
Specification
Overshoot area
0.80 Vns
0.80 Vns
0.23 Vns
0.23 Vns
-3/-3E
-3/-3E
0.50V
0.50V
0.50V
0.50V
Undershoot area
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1.00 Vns
1.00 Vns
0.28 Vns
0.28 Vns
0.50V
0.50V
0.50V
0.50V
-37E
-37E
1.33 Vns
1.33 Vns
0.38 Vns
0.38 Vns
0.50V
0.50V
0.50V
0.50V
-5E
-5E