mt47h64m16hw-3 Micron Semiconductor Products, mt47h64m16hw-3 Datasheet - Page 42

• Manufacturer Part Number: mt47h64m16hw-3
• Description: 1gb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

ODT DC Electrical Characteristics
Table 15:
Input Electrical Characteristics and Operating Conditions
Table 16:
Table 17:
PDF: 09005aef8117c187/Source: 09005aef821aed36
DDR2_x4x8x16_Core2.fm - 1Gb DDR2: Rev. N; Core DDR2: Rev. C 4/08 EN
Parameter
Parameter
Parameter
R
EMR (A6, A2) = 0, 1
R
EMR (A6, A2) = 1, 0
R
EMR (A6, A2) = 1, 1
Deviation of VM with respect to V
Input high (logic 1) voltage
Input low (logic 0) voltage
Input high (logic 1) voltage (-37E/-5E)
Input high (logic 1) voltage (-187E/-25E/-25/-3E/-3)
Input low (logic 0) voltage (-37E/-5E)
Input low (logic 0) voltage (-187E/-25E/-25/-3E/-3)
TT
TT
TT
effective impedance value for 75
effective impedance value for 150
effective impedance value for 50
ODT DC Electrical Characteristics
All voltages are referenced to V
Input DC Logic Levels
All voltages are referenced to V
Input AC Logic Levels
All voltages referenced to V
Notes:
Notes:
Notes:
1. R
2. Minimum IT and AT device values are derated by six percent when the devices operate
3. Measure voltage (VM) at tested ball with no load.
1. V
1. V
being tested, and then measuring current, I(V
between –40°C and 0°C (T
TT
DD
DD
DD
1(
Q + 300mV allowed provided 1.9V is not exceeded.
Q + 300mV allowed provided 1.9V is not exceeded.
EFF
Ω
Ω
Q/2
Ω
) and R
setting
setting
setting
SS
R
TT EFF
SS
SS
TT
(
ΔVM
2(
EFF
)
) are determined by separately applying V
=
=
⎛
⎝
-------------------------------------------------------------
I V
2 VM
----------------- - 1
(
Symbol
V
Symbol
V
C
V
V
V
V
V
×
DD
Symbol
R
R
R
).
IH
V
IL
IH AC
IH
IH
IL
IL
TT
TT
TT
(
42
ΔVM
IH AC
(
(
(
(
(
Q
DC
DC
(
AC
AC
AC
AC
1(
2(
3(
(
)
–
)
)
)
EFF
EFF
EFF
)
)
)
) I V
⎞
⎠
)
)
)
) V
–
–
×
100
(
IL AC
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
(
V
120
V
V
IL AC
60
40
–6
REF
REF
REF
(
)
(
(
(
–300
Min
DC
–300
–300
ODT DC Electrical Characteristics
IH
Min
DC
DC
)
(
)
) + 125
AC
) + 250
) + 200
1Gb: x4, x8, x16 DDR2 SDRAM
)), and I(V
Nom
150
75
50
V
V
V
IL
REF
REF
REF
(
AC
V
IH
V
V
Max
(
©2003 Micron Technology, Inc. All rights reserved.
Max
180
Max
(
(
DD
DC
90
60
)), respectively.
DD
DD
DC
DC
(
6
AC
) - 125
Q
) - 250
) - 200
Q
Q
) and V
1
1
1
Units
IL
%
Ω
Ω
Ω
(
AC
) to the ball
Units
Units
mV
mV
mV
mV
mV
mV
Notes
1, 2
1, 2
1, 2
(EQ 1)
(EQ 2)
3