se97b NXP Semiconductors, se97b Datasheet - Page 39

• Manufacturer Part Number: se97b
• Description: Ddr Memory Module Temp Sensor With Integrated Spd
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 31.
V
[1]
[2]
SE97B_1
Product data sheet
Symbol
V
I
I
I
V
V
V
V
V
V
V
I
I
I
C
C
I
Z
Z
DD(AV)
DD
sd(VDD)
LOH
LIH
LIL
pd
DD
IL
IH
DD
IH
IL
I(ov)
OL
I(hys)
th(POR)H
th(rec)POR
i(SCL/SDA)
i(addr)
= 3.0 V to 3.6 V; T
If the temperature sensor is not needed it should be placed in standby, which will reduce I
3.0 μA typical at 125 °C.
High-voltage input voltage applied to pin A0 during RWP and CRWP operations. The JEDEC specification is 7 V (min.) and 10 V (max.).
When V
DD
DC characteristics
Parameter
supply voltage
average supply current
supply current
supply voltage shutdown
mode current
HIGH-level input voltage
LOW-level input voltage
overvoltage input voltage
LOW-level output voltage
hysteresis of input voltage
HIGH-level power-on reset
threshold voltage
power-on reset recovery
threshold voltage
HIGH-level output leakage
current
HIGH-level input leakage
current
LOW-level input leakage
current
SCL and SDA input
capacitance
address input capacitance
pull-down current
LOW-level input impedance
HIGH-level input impedance
is 3.6 V, then I
amb
=
I(ov)
−
40
> 4.8 V + V
°
C to +125
DD
or > 4.8 V + 3.6 V then the minimum voltage is 8.4 V.
°
Conditions
SMBus inactive
f
SMBus inactive
SCL, SDA
SCL, SDA
pin A0; V
SDA, EVENT
V
V
device operation voltage increase
device reset voltage decrease
EVENT; V
SDA, SCL; V
SDA, SCL; V
A0, A1, A2; V
internal; A0, A1, A2 pins;
V
pins A0, A1, A2; V
pins A0, A1, A2; V
SCL
C; unless otherwise specified. These specifications are guaranteed by design.
DD
DD
I
I
I
I
= 0.3V
OL
OL
OL
= 400 kHz
≥ 2.2 V
≤ 2.2 V
Rev. 01 — 27 January 2010
= 0.7 mA
= 2.1 mA
= 3.0 mA
I(ov)
DD
OH
to V
I
I
− V
= V
I
= V
= V
DDR memory module temp sensor with integrated SPD
= V
DD
DD
DD
DD
SS
SS
I
I
< 0.3V
≥ 0.3V
> 4.8 V
DD
DD
[1]
[2]
DD(AV)
Min
3.0
-
-
-
0.7 × V
−0.5
7.0
-
-
-
0.05 × V
0.10 × V
-
1.2
−1.0
−1.0
−1.0
−1.0
-
-
-
30
800
to 0.1 μA typical at room temperature or
DD
DD
DD
Typ
-
210
250
0.1
-
-
-
-
-
-
-
-
-
1.8
-
-
-
-
5
5
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
3.6
320
400
10
V
+0.3 × V
10
0.2
0.4
0.5
-
-
2.9
-
+1.0
+1.0
+1.0
+1.0
8
10
4.0
-
-
DD
SE97B
+ 1
DD
39 of 53
Unit
V
μA
μA
μA
V
V
V
V
V
V
V
V
V
V
μA
μA
μA
μA
pF
pF
μA
kΩ
kΩ