k4j55323qg Samsung Semiconductor, Inc., k4j55323qg Datasheet - Page 22

• Manufacturer Part Number: k4j55323qg
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

7.8 Mirror Function
which helps to route devices back to back. The MF ball will affect RAS, CAS, WE, CS and CKE on balls H3, F4, H9, F9 and H4
respectively and A0, A1, A2, A3, A4, A5, A6, A7, A8, A9, A10, A11, BA0 and BA1 on balls K4, H2, K3, M4, K9, H11, K10, L9, K11, M9,
K2, L4, G4 and G9 respectively and only detects a DC input. The MF ball should be tied directly to VSS or VDD depending on the control
line orientation desired. When the MF ball is tied low the ball orientation is as follows, RAS - H3, CAS - F4, WE - H9, CS - F9, CKE -
H4, A0 - K4, A1 - H2, A2 - K3, A3 - M4, A4 - K9, A5 - H11, A6 - K10, A7 - L9, A8 - K11, A9 - M9, A10 - K2, A11 - L4, BA0 - G4 and
BA1 - G9. The high condition on the MF ball will change the location of the control balls as follows; CS - F4, CAS - F9, RAS - H10, WE
- H4, CKE - H9, A0 - K9, A1 - H11, A2 - K10, A3 - M9, A4 - K4, A5 - H2, A6 - K3, A7 - L4, A8 - K2, A9 - M4, A10 - K11,
A11 - L9, BA0 - G9 and BA1 - G4.
K4J55323QG
The GDDR3 SDRAM provides a mirror function (MF) ball to change the physical location of the control lines and all address lines
RAS
CAS
CKE
BA0
BA1
PIN
A10
A11
WE
CS
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
Mirror Function Signal Mapping
HIGH
H10
H11
K10
K11
M9
M4
H4
H9
H2
G9
G4
F9
F4
K9
K4
K3
K2
L4
L9
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MF LOGIC STATE
256M GDDR3 SDRAM
LOW
H11
K10
K11
M4
M9
G4
G9
H3
H9
H4
K4
H2
K3
K9
K2
F4
F9
L9
L4
Rev. 1.3 June 2006