k4j55323qg Samsung Semiconductor, Inc., k4j55323qg Datasheet - Page 29

• Manufacturer Part Number: k4j55323qg
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4J55323QG
Random READ Accesses
COMMAND
COMMAND
ADDRESS
ADDRESS
RDQS
RDQS
/CK
CK
/CK
CK
NOTE
DQ
DQ
:
1. DO n (or x or b or g) = data-out from column n (or column x or column x or column b or column g).
2. Burst length = 4
3. n’ or x or b’ or g’ indicates the next data-out following DO n or DO x or DO b OR DO g, respectively
4. READs are to an active row in any bank.
5. Shown with nominal t
6. RDQS will start driving high one half-clock cycle prior to the first falling edge of RDQS.
Bank a,
Bank a,
READ
READ
Col n
Col n
T0
T0
NOP
NOP
AC
T1
T1
CL = 8
CL = 8
and t
DQSQ.
Bank a,
Bank a,
READ
READ
Col b
Col b
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T7
T2
DON’T CARE
NOP
NOP
T8
T8
DO
DO
n
n
T8n
T8n
256M GDDR3 SDRAM
DO
DO
n
n
TRANSITIONING DATA
NOP
NOP
T9
T9
Rev. 1.3 June 2006
DO
DO
n
n
T9n
T9n
DO
DO
n
n
NOP
NOP
T10
T15
DO
DO
b
b
T10n
T15n