k4j55323qg Samsung Semiconductor, Inc., k4j55323qg Datasheet - Page 26

• Manufacturer Part Number: k4j55323qg
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4J55323QG
READ Burst
COMMAND
COMMAND
ADDRESS
ADDRESS
RDQS
RDQS
/CK
CK
/CK
CK
NOTE :
DQ
DQ
1. DO n=data-out from column n.
2. Burst length = 4
3. Three subsequent elements of data-out appear in the programmed order following DQ n.
4. Shown with nominal t
5. RDQS will start driving high 1/2 clock cycle prior to the first falling edge.
Bank a,
Bank a,
READ
READ
Col n
Col n
T0
T0
CL = 8
CL = 9
NOP
NOP
AC
T7
T7
and t
DQSQ.
NOP
NOP
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T8
T8
DO
n
T8n
DON’T CARE
NOP
NOP
T9
T9
DO
n
T9n
T9n
256M GDDR3 SDRAM
NOP
T10
NOP
T10
TRANSITIONING DATA
Rev. 1.3 June 2006
NOP
T11
NOP
T11