k4j55323qg Samsung Semiconductor, Inc., k4j55323qg Datasheet - Page 31

• Manufacturer Part Number: k4j55323qg
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4J55323QG
READ to PRECHARGE
COMMAND
COMMAND
ADDRESS
ADDRESS
RDQS
RDQS
/CK
CK
/CK
CK
NOTE
DQ
DQ
:
1. DO n (or b) = data-out from column n (or column b).
2. Burst length = 4
3. Three subsequent elements of data-out appear in the programmed order following DQ n.
4. Three subsequent elements of data-out appear in the programmed order following DQ b.
5. Shown with nominal t
6. Example applies when READ commands are issued to different devices or nonconsecutive READs.
7. RDQS will start driving high one half-clock cycle prior to the first falling edge of RDQS.
Bank a,
Bank a,
READ
READ
Col n
Col n
T0
T0
AC
NOP
NOP
T1
T1
and t
CL = 8
CL = 8
DQSQ.
(a or all)
(a or all)
Bank a,
Bank a,
PRE
PRE
- 31 /53 -
T2
T7
DON’T CARE
NOP
NOP
T8
T8
DO
DO
n
n
T8n
T8n
t
t
RP
RP
256M GDDR3 SDRAM
TRANSITIONING DATA
NOP
NOP
T9
T9
Rev. 1.3 June 2006
T9n
Bank a,
Bank a,
T10
ACT
T13
ACT
Row
Row