k4j55323qg Samsung Semiconductor, Inc., k4j55323qg Datasheet - Page 44

• Manufacturer Part Number: k4j55323qg
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4J55323QG
3. Current state definitions :
4. AUTO REFRESH and LOAD MODE REGISTER commands may only be issued when all banks are idle.
5. All states and sequences not shown are illegal or reserved.
6. READs or WRITEs listed in the Command/Action column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto
7. Requires appropriate DM masking.
3a. The read with auto precharge enabled or write with auto precharge enabled states can each be broken into two parts : the access period and the
3b. The minimum delay from a READ or WRITE command with auto precharge enabled, to a command to a different bank is summarized below.
Precharge Enabled
Precharge Enabled
precharge disabled.
precharge period. For read with auto precharge, the precharge period is defined as if the same burst was executed with auto precharge disabled
and then followed with the earliest possible PRECHARGE command that still accesses all of the data in the burst. For write with auto precharge, the
precharge period begins when tWR ends, with tWR command and ends where the precharge period (or t
the read with auto precharge enabled or write with auto precharge enabled states, ACTIVE, PRECHARGE, READ and WRITE commands to the
other bank may be applied. In either case, all other related Limitations apply (e.g., contention between read data write data must be avoided).
From Command
WRITE w/AP
READ w/AP
Read w/ Auto- : See following text
Write w/ Auto- : See following text
Row Active : A row in the bank has been activated, and t
Read : A READ burst has been initiated, with auto precharge disabled.
Write : A WRITE burst has been initiated, with auto precharge disabled.
Idle : The bank has been precharged, and t
No data bursts/accesses and no register accesses are in progress.
READ or READ w/AP
WRITE or WRITE w/AP
PRECHARGE
ACTIVE
READ or READ w/AP
WRITE or WRITE w/AP
PRECHARGE
ACTIVE
To Command
RP
has been met.
RCD
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has been met.
Minimum delay (with concurrent auto precharge)
[CL
RU
[WL + (BL/2)] tCK + tWR
+ (BL/2)] + 1 - WL * tCK
256M GDDR3 SDRAM
(BL/2) * tCK
(BL/2) * tCK
RP
1 tCK
1 tCK
1 tCK
1 tCK
) begins. During the precharge period of
Rev. 1.3 June 2006
+1tCK