k4j55323qg Samsung Semiconductor, Inc., k4j55323qg Datasheet - Page 34

• Manufacturer Part Number: k4j55323qg
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

COMMAND
K4J55323QG
Consecutive WRITE to WRITE
ADDRESS
WDQS
DM
CK#
CK
DQ
NOTE
:
1. DI b, etc. = data-in for column b, etc.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. Burst of 4 is shown.
5. Each WRITE command may be to any bank of the same device.
6. Write latency is set to 3
WRITE
Col b
Bank
T0
t
DQSS
(NOM)
NOP
T1
WRITE
Col n
Bank
T2
- 34 /53 -
NOP
DI
T3
b
T3n
DON’T CARE
NOP
T4
T4n
256M GDDR3 SDRAM
NOP
TRANSITIONING DATA
T5
DI
n
T5n
Rev. 1.3 June 2006
NOP
T6
T6n
NOP
T7