k4j55323qg Samsung Semiconductor, Inc., k4j55323qg Datasheet - Page 38

• Manufacturer Part Number: k4j55323qg
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4J55323QG
WRITE to PRECHARGE
COMMAND
ADDRESS
t
t
DQSS
DQSS
t
DQSS
NOTE
WDQS
WDQS
WDQS
/CK
(NOM)
(MAX)
CK
DQ
DM
(MIN)
DQ
DM
DQ
DM
:
1. DI b = data-in for column b.
2. Three subsequent elements of data-in the programmed order following DI b.
3. A burst of 4 is shown.
4. A8 is LOW with the WRITE command (auto precharge is disabled).
5. WRITE latency is set to 3
WRITE
Col b
Bank
T0
t
t
t
DQSS
DQSS
DQSS
NOP
T1
NOP
T2
DI
b
NOP
DI
T3
b
DI
b
T3n
- 38 /53 -
NOP
T4
T4n
DON’T CARE
NOP
T5
NOP
t
T8
WR
256M GDDR3 SDRAM
TRANSITIONING DATA
(a or all)
Bank
PRE
T9
Rev. 1.3 June 2006
NOP
T10
t
RP
NOP
T11