HYB18T512160AC-37 INFINEON [Infineon Technologies AG], HYB18T512160AC-37 Datasheet - Page 61

• Manufacturer Part Number: HYB18T512160AC-37
• Description: 512-Mbit Double-Data-Rate-Two SDRAM
• Manufacturer: INFINEON [Infineon Technologies AG]

Figure 56
Note: Active Power-Down mode exit timing
Figure 57
Note: Active Power-Down mode exit timing
Data Sheet
D Q S ,
D Q S
C K , C K
C K E
C M D
D Q
D Q S ,
D Q S
C K , C K
C K E
C M D
D Q
state in the MRS, address bit A12.
state in the MRS, address bit A12. WR is the programmed value in the MRS mode register.
T0
W R IT E
w /A P
T0
W R IT E
WL = RL - 1 = 2
WL = RL - 1 = 2
Active Power-Down Mode Entry and Exit Example after a Write Command:
WL = 2,
Active Power-Down Mode Entry and Exit Example after a Write Command with AP:
WL = 2, WR = 3, BL = 4
T1
T1
N O P
N O P
t
WTR
DIN A0 DIN A1 DIN A2 DIN A3
DIN A0 DIN A1 DIN A2 DIN A3
T2
T2
N O P
N O P
= 2, BL = 4
T3
T3
N O P
N O P
WL + BL/2 + tWTR
WL + BL/2 + WR
T4
T4
N O P
N O P
t
t
XARD
XARD
T5
T5
(“fast exit”) or
(“fast exit”) or
N O P
tWTR
N O P
WR
Power-Down
tIS
Active
61
Entry
T6
T6
N O P
N O P
tIS
Power-Down
512-Mbit Double-Data-Rate-Two SDRAM
Active
HYB18T512[400/800/160]A[C/F]–[3.7/5]
t
t
Entry
XARDS
XARDS
T7
T7
N O P
N O P
(“slow exit”) depends on the programmed
(“slow exit”) depends on the programmed
N O P
N O P
Power-Down
Power-Down
Active
Exit
Active
Tn
Exit
Tn
N O P
tIS
N O P
tIS
Tn+1
tXARD or
tXARDS *)
Tn+1
tXARD or
tXARDS *)
Functional Description
N O P
N O P
09112003-SDM9-IQ3P
Act.PD 2
Rev. 1.13, 2004-05
Tn+2
Act.PD 3
C o m m and
Tn+2
V alid
C o m m a n d
V a lid