NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 23

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
Consecutive Read Bursts: CAS Latencies (Burst Length = 4 or 8)
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
Command
Command
DO a-n (or a-b) = data out from bank a, column n (or bank a, column b).
When burst length = 4, the bursts are concatenated.
When burst length = 8, the second burst interrupts the first.
3 subsequent elements of data out appear in the programmed order following DO a-n.
3 (or 7) subsequent elements of data out appear in the programmed order following DO a-b.
Shown with nominal t
Address
Address
DQS
DQS
DQ
DQ
CK
CK
CK
CK
AC
BAa, COL n
BAa, COL n
, t
Read
Read
DQSCK
, and t
DQSQ
CL=2
NOP
NOP
.
CL=2.5
BAa,COL b
BAa, COL b
Read
Read
DOa-n
DOa- n
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
NOP
NOP
NOP
NOP
DOa-b
CAS Latency = 2
CAS Latency = 2.5
DOa- b
NOP
NOP
Don’t Care
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