NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 6

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
Block Diagram (32Mb x 8)
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
BA0, BA1
A0-A12,
CKE
CK
CK
CS
WE
CAS
RAS
15
Registers
15
Mode
Note: This Functional Block Diagram is intended to facilitate user understanding of the operation of
the device; it does not represent an actual circuit implementation.
Note: DM is a unidirectional signal (input only), but is internally loaded to match the load of the bidi-
rectional DQ and DQS signals.
10
13
2
Column-Address
Counter/Latch
13
2
9
1
8192
DM Mask Logic
(8192 x 512 x 16)
Sense Amplifiers
COL0
I/O Gating
Decoder
Column
Memory
(x16)
512
Bank1
Bank0
Array
Bank2
16
Bank3
16
16
CK,
CK
Drivers
clk
out
Write
FIFO
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
&
8
8
clk
in
COL0
Mask
Data
16
2
COL0
Generator
1
1
8
8
Register
DQS
Input
8
1
1
8
8
Data
1
1
8
DQS
1
DLL
CK, CK
DQ0-DQ7,
DM
DQS
6