NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 41

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
Write to Precharge: Non-Interrupting (Burst Length = 4)
Command
Command
Address
Address
DQS
DQS
DM
DM
DQ
DQ
CK
CK
CK
CK
DI a-b = data in for bank a, column b.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
A non-interrupted burst is shown.
t
A10 is Low with the Write command (Auto Precharge is disabled).
WR
is referenced from the first positive CK edge after the last data in pair.
BA a, COL b
BA a, COL b
Write
Write
T1
T1
t
DQSS
DI a-b
(max)
t
DQSS
NOP
NOP
T2
T2
DI a-b
(min)
NOP
NOP
T3
T3
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
NOP
NOP
T4
T4
NOP
NOP
t
t
WR
WR
Maximum D
Minimum D
T5
T5
QSS
BA (a or all)
BA (a or all)
QSS
PRE
PRE
Don’t Care
T6
T6
t
t
RP
RP
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