NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 25

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
Random Read Accesses: CAS Latencies (Burst Length = 2, 4 or 8)
Command
Command
DO a-n, etc. = data out from bank a, column n etc.
n' etc. = odd or even complement of n, etc. (i.e., column address LSB inverted).
Reads are to active rows in any banks.
Shown with nominal t
Address
Address
DQS
DQS
DQ
DQ
CK
CK
CK
CK
AC
, t
BAa, COL n
BAa, COL n
DQSCK
Read
Read
, and t
DQSQ
BAa, COL x
BAa, COL x
CL=2
.
Read
Read
CL=2.5
BAa, COL b
BAa, COL b
Read
Read
DOa-n
DOa-n'
DOa-n
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
BAa, COL g
BAa, COL g
Read
Read
DOa-x
DOa-n'
DOa-x'
DOa-x
NOP
NOP
DOa-b
DOa-x'
CAS Latency = 2
CAS Latency = 2.5
DOa-b’
DOa-b
NOP
NOP
DOa-g
DOa-b’
Don’t Care
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