NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 34

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
Write to Write (Burst Length = 4)
Command
Command
Address
Address
DQS
DQS
DI a-b = data in for bank a, column b, etc.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
3 subsequent elements of data in are applied in the programmed order following DI a-n.
A non-interrupted burst is shown.
Each Write command may be to any bank.
DM
DM
DQ
DQ
CK
CK
CK
CK
BAa, COL b
BA, COL b
Write
Write
T1
T1
t
DQSS
(max)
DI a-b
t
DQSS
NOP
NOP
T2
T2
DI a-b
(min)
BAa, COL n
BA, COL n
Write
Write
T3
T3
DI a-n
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
NOP
NOP
T4
T4
DI a-n
NOP
NOP
T5
T5
Maximum D
Minimum D
NOP
NOP
QSS
Don’t Care
QSS
T6
T6
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