NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 27

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
Terminating a Read Burst: CAS Latencies (Burst Length = 8)
Command
Command
DO a-n = data out from bank a, column n.
Cases shown are bursts of 8 terminated after 4 data elements.
3 subsequent elements of data out appear in the programmed order following DO a-n.
Shown with nominal t
Address
Address
DQS
DQS
DQ
DQ
CK
CK
CK
CK
AC
BAa, COL n
BAa, COL n
, t
Read
Read
DQSCK
, and t
DQSQ
CL=2
NOP
NOP
.
CL=2.5
BST
BST
DOa-n
DOa-n
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
No further output data after this point.
DQS tristated.
No further output data after this point.
DQS tristated.
NOP
NOP
NOP
NOP
CAS Latency = 2.5
CAS Latency = 2
NOP
NOP
Don’t Care
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