NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 24

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
Non-Consecutive Read Bursts: CAS Latencies (Burst Length = 4)
Command
Address
DO a-n (or a-b) = data out from bank a, column n (or bank a, column b).
3 subsequent elements of data out appear in the programmed order following DO a-n (and following DO a-b).
Shown with nominal t
Command
Address
DQS
DQ
CK
CK
DQS
DQ
CK
CK
BAa, COL n
Read
AC
, t
DQSCK
BAa, COL n
Read
, and t
NOP
DQSQ
CL=2.5
.
CL=2
NOP
NOP
NOP
DO a-n
DO a-n
BAa, COL b
Read
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
BAa, COL b
Read
NOP
NOP
CAS Latency = 2
CAS Latency = 2.5
NOP
NOP
DOa- b
Don’t Care
DOa- b
NOP
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