NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 33

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
Write Burst (Burst Length = 4)
(Optional)
Command
Command
DI a-b = data in for bank a, column b.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
A non-interrupted burst is shown.
A10 is Low with the Write command (Auto Precharge is disabled).
QFC is an open drain driver. Its output high level is achieved through an externally connected pull up resistor connected to V
Address
Address
QFC
DQS
DQS
QFC
DM
DQ
DM
DQ
CK
CK
CK
CK
BA a, COL b
BA a, COL b
Write
Write
T1
T1
t
DQSS
t
(min)
DQSS
t
t
QCSW
QCSW
Dla-b
(max)
(max)
(max)
NOP
NOP
T2
T2
Dla-b
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
NOP
NOP
T3
T3
t
QCHW
t
Minimum D
Maximum D
QCHW
(min)
(max)
NOP
NOP
QSS
T4
T4
QSS
Don’t Care
DDQ
.
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