NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 45

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NT5DS16M16CS

Manufacturer Part Number
NT5DS16M16CS
Description
256Mb DDR Synchronous DRAM
Manufacturer
NANOAMP [NanoAmp Solutions, Inc.]
Datasheet

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NanoAmp Solutions, Inc.
Precharge
The Precharge command is used to deactivate the open row in a particular bank or the open row in all banks. The
bank(s) is available for a subsequent row access some specified time (t
issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank
is to be precharged, inputs BA0, BA1 select the bank. When all banks are to be precharged, inputs BA0, BA1 are
treated as “Don’t Care.” Once a bank has been precharged, it is in the idle state and must be activated prior to any
Read or Write commands being issued to that bank.
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
Precharge Command
A0-A9, A11, A12
BA0, BA1
CKE
RAS
CAS
A10
WE
CK
CK
CS
BA = bank address
(if A10 is Low, otherwise Don’t Care).
HIGH
One Bank
All Banks
Don’t Care
BA
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
RP
) after the Precharge command is
45

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