MT41J64M16LA-187E:B TR Micron Technology Inc, MT41J64M16LA-187E:B TR Datasheet - Page 57

• Manufacturer Part Number: MT41J64M16LA-187E:B TR
• Description: IC DDR3 SDRAM 1GBIT 96FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J64M16LA-187E:B TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (64M x 16)
• Speed: 533MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 96-FBGA
• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 265mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1378-2

Table 31: R
ODT Sensitivity
Table 32: ODT Sensitivity Definition
ODT Timing Definitions
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
Symbol
[9, 6, 2]
1, 0, 0
MR1
R
TT
TT
Effective Impedances (Continued)
0.9 - dR
20Ω
R
TT
Note:
Note:
Note:
TT
dT × |DT| - dR
20Ω
If either the temperature or voltage changes after I/O calibration, then the tolerance
limits listed in Table 30 (page 55) and Table 31 can be expected to widen according to
Table 32 and Table 33 (page 57).
Table 33: ODT Temperature and Voltage Sensitivity
ODT loading differs from that used in AC timing measurements. The reference load for
ODT timings is shown in Figure 24. Two parameters define when ODT turns on or off
synchronously, two define when ODT turns on or off asynchronously, and another de-
fines when ODT turns on or off dynamically. Table 34 outlines and provides definition
and measurement references settings for each parameter (see Table 35 (page 58)).
ODT turn-on time begins when the output leaves High-Z and ODT resistance begins to
turn on. ODT turn-off time begins when the output leaves Low-Z and ODT resistance
begins to turn off.
1. Values assume an RZQ of 240Ω (±1%).
1. ΔT = T - T(@ calibration), ΔV = V
1. ΔT = T - T(@ calibration), ΔV = V
R
R
Resistor
Min
TT20(PD40)
TT20(PU40)
Change
dR
dR
TT
dV × |DV|
TT
TT
dV
dT
V
IL(AC)
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
V
to V
OUT
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
IH(AC)
57
1.6 + dR
DDQ
DDQ
Min
0
0
TT
Min
dT × |DT| + dR
- V
- V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
0.6
0.9
0.9
0.9
0.9
0.6
0.9
DDQ
DDQ
Max
(@ calibration) and V
(@ calibration) and V
1Gb: x4, x8, x16 DDR3 SDRAM
TT
Nom
1.0
1.0
1.0
1.0
1.0
1.0
1.0
dV × |DV|
Max
0.15
1.5
ODT Characteristics
© 2006 Micron Technology, Inc. All rights reserved.
DD
DD
Max
= V
= V
1.1
1.1
1.4
1.4
1.1
1.1
1.6
RZQ/(2, 4, 6, 8, 12)
DDQ
DDQ
.
.
Units
%/mV
Units
%/°C
RZQ/12
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
Units