MT41J64M16LA-187E:B TR Micron Technology Inc, MT41J64M16LA-187E:B TR Datasheet - Page 9

• Manufacturer Part Number: MT41J64M16LA-187E:B TR
• Description: IC DDR3 SDRAM 1GBIT 96FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J64M16LA-187E:B TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (64M x 16)
• Speed: 533MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 96-FBGA
• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 265mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1378-2

Figure 51: MRS to MRS Command Timing (
Figure 52: MRS to nonMRS Command Timing (
Figure 53: Mode Register 0 (MR0) Definitions ................................................................................................ 132
Figure 54: READ Latency .............................................................................................................................. 134
Figure 55: Mode Register 1 (MR1) Definition ................................................................................................. 135
Figure 56: READ Latency (AL = 5, CL = 6) ....................................................................................................... 138
Figure 57: Mode Register 2 (MR2) Definition ................................................................................................. 139
Figure 58: CAS Write Latency ........................................................................................................................ 139
Figure 59: Mode Register 3 (MR3) Definition ................................................................................................. 141
Figure 60: Multipurpose Register (MPR) Block Diagram ................................................................................. 142
Figure 61: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout ..................................... 145
Figure 62: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout ......................... 146
Figure 63: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble ................................... 147
Figure 64: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble ................................... 148
Figure 65: ZQ Calibration Timing (ZQCL and ZQCS) ...................................................................................... 150
Figure 66: Example: Meeting
Figure 67: Example:
Figure 68: READ Latency .............................................................................................................................. 153
Figure 69: Consecutive READ Bursts (BL8) .................................................................................................... 155
Figure 70: Consecutive READ Bursts (BC4) .................................................................................................... 155
Figure 71: Nonconsecutive READ Bursts ....................................................................................................... 156
Figure 72: READ (BL8) to WRITE (BL8) .......................................................................................................... 156
Figure 73: READ (BC4) to WRITE (BC4) OTF .................................................................................................. 157
Figure 74: READ to PRECHARGE (BL8) ......................................................................................................... 157
Figure 75: READ to PRECHARGE (BC4) ......................................................................................................... 158
Figure 76: READ to PRECHARGE (AL = 5, CL = 6) ........................................................................................... 158
Figure 77: READ with Auto Precharge (AL = 4, CL = 6) .................................................................................... 158
Figure 78: Data Output Timing –
Figure 79: Data Strobe Timing – READs ......................................................................................................... 161
Figure 80: Method for Calculating
Figure 81:
Figure 82:
Figure 83:
Figure 84:
Figure 85: WRITE Burst ................................................................................................................................ 166
Figure 86: Consecutive WRITE (BL8) to WRITE (BL8) ..................................................................................... 167
Figure 87: Consecutive WRITE (BC4) to WRITE (BC4) via MRS or OTF ............................................................ 167
Figure 88: Nonconsecutive WRITE to WRITE ................................................................................................. 168
Figure 89: WRITE (BL8) to READ (BL8) .......................................................................................................... 168
Figure 90: WRITE to READ (BC4 Mode Register Setting) ................................................................................. 169
Figure 91: WRITE (BC4 OTF) to READ (BC4 OTF) ........................................................................................... 170
Figure 92: WRITE (BL8) to PRECHARGE ........................................................................................................ 171
Figure 93: WRITE (BC4 Mode Register Setting) to PRECHARGE ...................................................................... 171
Figure 94: WRITE (BC4 OTF) to PRECHARGE ................................................................................................ 172
Figure 95: Data Input Timing ........................................................................................................................ 173
Figure 96: Self Refresh Entry/Exit Timing ...................................................................................................... 175
Figure 97: Active Power-Down Entry and Exit ................................................................................................ 179
Figure 98: Precharge Power-Down (Fast-Exit Mode) Entry and Exit ................................................................ 180
Figure 99: Precharge Power-Down (Slow-Exit Mode) Entry and Exit ............................................................... 180
Figure 100: Power-Down Entry After READ or READ with Auto Precharge (RDAP) .......................................... 181
Figure 101: Power-Down Entry After WRITE .................................................................................................. 181
Figure 102: Power-Down Entry After WRITE with Auto Precharge (WRAP) ...................................................... 182
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
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t
t
t
RPRE Timing ............................................................................................................................... 162
RPST Timing ............................................................................................................................... 163
WPRE Timing .............................................................................................................................. 165
WPST Timing .............................................................................................................................. 165
t
FAW ............................................................................................................................. 152
t
RRD (MIN) and
t
DQSQ and Data Valid Window ................................................................... 160
t
LZ and
t
HZ .............................................................................................. 162
t
MRD) ......................................................................................... 130
t
RCD (MIN) ............................................................................. 151
t
MOD) .................................................................................. 131
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1Gb: x4, x8, x16 DDR3 SDRAM
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