STM8S103F3P6

Manufacturer Part NumberSTM8S103F3P6
DescriptionMCU 8BIT 8KB FLASH 20-TSSOP
ManufacturerSTMicroelectronics
SeriesSTM8S
STM8S103F3P6 datasheet
 

Specifications of STM8S103F3P6

Core ProcessorSTM8Core Size8-Bit
Speed16MHzConnectivityI²C, IrDA, LIN, SPI, UART/USART
PeripheralsBrown-out Detect/Reset, POR, PWM, WDTNumber Of I /o16
Program Memory Size8KB (8K x 8)Program Memory TypeFLASH
Eeprom Size640 x 8Ram Size1K x 8
Voltage - Supply (vcc/vdd)2.95 V ~ 5.5 VData ConvertersA/D 5x10b
Oscillator TypeInternalOperating Temperature-40°C ~ 85°C
Package / Case20-TSSOPProcessor SeriesSTM8S10x
CoreSTM8Data Bus Width8 bit
Data Ram Size1 KBInterface TypeI2C, SPI, UART
Maximum Clock Frequency16 MHzNumber Of Programmable I/os16
Number Of Timers7Maximum Operating Temperature+ 85 C
Mounting StyleSMD/SMT3rd Party Development ToolsEWSTM8
Development Tools By SupplierSTM8/128-MCKIT, STM8S-DISCOVERY, ST-LINK, STICE-SYS001, STX-RLINKMinimum Operating Temperature- 40 C
On-chip Adc10 bit, 5 ChannelFeatured ProductSTM32 Cortex-M3 Companion Products
For Use With497-10593 - KIT STARTER FOR STM8S207/8 SERLead Free Status / RoHS StatusLead free / RoHS Compliant
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Page 88/113

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Electrical characteristics
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
recovered by applying a low state on the NRST pin or the oscillator pins for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring. See application note AN1015 (Software techniques
for improving microcontroller EMC performance).
Symbol
Parameter
V
Voltage limits to be
FESD
applied on any I/O pin to
induce a functional
disturbance
V
Fast transient voltage
EFTB
burst limits to be applied
through 100 pF on V
and V
SS
functional disturbance
(1)
Data obtained with HSI clock configuration, after applying HW recommendations described
in AN2860 (EMC guidelines for STM8S microcontrollers).
10.3.11.3
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O ports),
the product is monitored in terms of emission. This emission test is in line with the norm SAE
IEC 61967-2 which specifies the board and the loading of each pin.
Symbol
Parameter
Peak level
S
EMI
88/113
STM8S103K3 STM8S103F3 STM8S103F2
Table 48: EMS data
Conditions
V
= 3.3 V, T
DD
(HSI clock), conforming to IEC 61000-4-2
V
= 3.3 V, T
DD
DD
(HSI clock),conforming to IEC 61000-4-4
pins to induce a
Table 49: EMI data
Conditions
General
Monitored
conditions
frequency band
V
= 5 V
DD
0.1 MHz to
T
= 25 °C
A
30 MHz
LQFP32
package
30 MHz to
DocID15441 Rev 6
= 25 °C, f
= 16 MHz
A
MASTER
= 25 °C ,f
= 16 MHz
A
MASTER
(1)
Max f
/f
HSE
CPU
16 MHz/
16 MHz/
8 MHz
16 MHz
5
5
4
5
Level/
class
(1)
2/B
(1)
4/A
Unit
dBμV